Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Contact Via Etching Method

A contact through-hole and etching technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems affecting the CVD process, current leakage, etc., to eliminate notches and high roughness, good shape, and avoid The effect of the potential risk of current leakage

Active Publication Date: 2018-06-29
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both the above-mentioned notch and roughness will adversely affect the subsequent CVD process and cause current leakage problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Contact Via Etching Method
  • Contact Via Etching Method
  • Contact Via Etching Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same numbers will be used throughout the drawings to refer to the same or like parts. In addition, although the terms used in the present invention are selected from well-known and commonly used terms, some terms mentioned in the description of the present invention may be selected by the applicant according to his or her judgment, and the detailed meanings thereof are set forth herein described in the relevant section of the description. Furthermore, it is required that the present invention be understood not only by the actual terms used, but also by the meaning implied by each term.

[0027] first reference Figure 2-Figure 3c , which shows a flow chart of the basic steps of the conta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a contact via etching method, which is suitable for a composite layer structure formed by stacking at least a first material layer and a second material layer, wherein the materials of the first material layer and the second material layer are different, and the contact via The hole etching method includes: a. using a Bosch etching process to etch the first material layer to form a contact via in the first material layer, wherein the Bosch etching process further includes: a1. polymer; a2. removing the polymer at the bottom of the contact via; a3. etching a predetermined depth in the contact via; a4. repeating the steps a1-a3 above until the contact via is in the first material layer to a specified depth; and b. etching the contact via to the specified depth using another etch process than the Bosch etch process described above such that the contact via reaches the second material layer below the first material layer. The invention can make the etched contact through hole have a better shape.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor integrated circuit devices, in particular to a contact through hole etching method. Background technique [0002] With the deepening of technological development, the feature size of semiconductor devices has become very small now, and it is becoming more and more difficult to increase the number of semiconductor devices in a two-dimensional packaging structure. Therefore, three-dimensional packaging has become a method that can effectively improve chip integration. degree method. Current three-dimensional packaging includes die stacking based on gold wire bonding, package stacking and three-dimensional stacking based on through silicon vias (Through Silicon Via, TSV). Among them, the three-dimensional stacking technology using through-silicon vias has the following three advantages: (1) high-density integration; (2) greatly shortening the length of electrical interconnections, which ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 伏广才许继辉苏良得倪梁汪新学
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com