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A circuit device and manufacturing method

A technology of circuit devices and integrated circuits, applied in the field of circuits, can solve the problems of low thermal conductivity and difficult to meet the heat dissipation requirements of high-power chips

Active Publication Date: 2019-01-18
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thermal conductivity of silver glue materials is low, and it is difficult to meet the heat dissipation requirements of high-power chips

Method used

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  • A circuit device and manufacturing method
  • A circuit device and manufacturing method
  • A circuit device and manufacturing method

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Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0033] figure 1 is a cross-sectional illustration of the package structure 100 including the device according to the first embodiment of the present invention. The flip chip ball grid array package structure includes solder balls 108, a substrate 107, an adhesive 106, a metal bump (BUMP) 102, a circuit device (such as an integrated circuit die) 103, a thermal interface material layer 104 and a heat sink 105. Integrated circuit die 103 is coupled to substrate 107...

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Abstract

An embodiment of the present invention provides a device. The device includes: a circuit device, a heat sink and a thermal interface material layer. The thermal interface material layer is thermally coupled with the circuit device and the heat sink. The thermal interface material layer includes: a first alloy layer, a nano metal particle layer and a second alloy layer. The first alloy layer is thermally coupled to the circuit device. The nano metal particle layer is thermally coupled with the first alloy layer. The nano metal particle layer includes nano metal particles and an intermediate mixture.

Description

technical field [0001] The invention relates to the field of circuits, in particular to a circuit device and a manufacturing method. Background technique [0002] Figure 1A Shown is an exemplary cross-sectional view of an integrated circuit chip and a part of its packaging structure in the prior art. The structure includes an integrated circuit chip 1A02 , a thermal interface material layer 1A04 and a heat sink 1A06 . The heat generated by the integrated circuit chip 1A02 during operation flows into the heat sink 1A06 through the thermal interface material layer 1A04 on the back of the chip. Therefore, the thermal conductivity of the thermal interface material layer 1A04 itself has an important impact on the heat dissipation of the chip. The existing thermal interface material layer includes silver colloidal materials. Silver colloidal materials are mixed with metal silver particles 1A08 to improve thermal conductivity, but the continuous phase formed by silver colloidal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/373H01L21/48
CPCH01L2224/16225H01L2224/73204H01L2224/73253H01L2924/15311H01L2924/16152H01L23/3735H01L23/3736H01L23/42H01L21/4882H01L2224/8384H01L21/4871H01L23/3672H01L23/3733
Inventor 符会利林志荣蔡树杰
Owner HUAWEI TECH CO LTD