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Anti-static anti-radiation anti-ultraviolet memory fabric

An anti-ultraviolet and anti-static technology, applied to protective clothing, special outerwear, fabrics, etc., can solve the problems of no anti-ultraviolet and other problems, and achieve the effect of strong three-dimensional effect and unique memory function on the cloth surface

Inactive Publication Date: 2016-03-23
王世杰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ordinary fabrics are single-layer fabrics, which have no UV protection effect.
In addition, the traditional fabrics used to make clothing bodies do not have memory function, antistatic and anti-radiation effects at the same time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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  • Anti-static anti-radiation anti-ultraviolet memory fabric

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Comparison scheme
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Embodiment Construction

[0013] see figure 1 , the present invention is a kind of memory antistatic radiation protection ultraviolet protection fabric, which comprises a base fabric layer 1 and a fabric layer 2, an ultraviolet protection layer 3 is arranged between the base fabric layer 1 and the fabric layer 2, and the ultraviolet protection Layer 3 is a silver glue coating, and the silver glue coating is bonded between the base fabric layer 1 and the fabric layer 2 .

[0014] The base fabric layer adopts PTT memory color yarn as warp yarn, and adopts PET polyester fine denier special-shaped shiny yarn as weft yarn; the warp yarn and weft yarn adopt 3 / 1 twill or 1 / 1 plain weave or 3 / 1 twill + 1 / 1 plain weave cavalry twill structure woven into fabric.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The invention relates to a anti-static anti-radiation anti-ultraviolet memory fabric which comprises a base cloth layer (1) and a fabric layer (2). The anti-static anti-radiation anti-ultraviolet memory fabric is characterized in that an anti-ultraviolet layer (3) is arranged between the base cloth layer (1) and the fabric layer (2), and a silver glue coating is adopted as the anti-ultraviolet layer (3) and bonded between the base cloth layer (1) and the fabric layer (2); the base cloth layer adopts PTT memory color yarn as warp yarn and adopts PET polyester fine denier special-shaped bright yarn as weft yarn; the warp yarn and the weft yarn are woven into the fabric by adopting a calvary twill texture structure composed of 3 / 1 twill or 1 / 1 tabbies or 3 / 1 twill and 1 / 1 tabbies. According to the anti-static anti-radiation anti-ultraviolet memory fabric, penetration of ultraviolet rays can be effectively prevented, and therefore the anti-ultraviolet effect is achieved; the memory anti-static anti-radiation effects are achieved.

Description

(1) Technical field [0001] The invention relates to a fabric, in particular to a memory, anti-static, radiation-proof, and ultraviolet-proof fabric. (2) Background technology [0002] With the improvement of the quality of life, more and more people realize the importance of health, and excessive ultraviolet rays will cause some photochemical reactions, which will cause a series of changes in human body functions and affect people's health. Therefore, when the weather is released, the ultraviolet index will be released. Also published as a content. The ordinary fabric is a single-layer fabric, which has no UV protection effect. In addition, the traditional fabrics used to make the clothing body do not have memory function, antistatic and anti-radiation effects at the same time. (3) Contents of the invention [0003] The purpose of the present invention is to overcome the above-mentioned deficiencies and provide a memory antistatic anti-radiation anti-ultraviolet fabric. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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IPC IPC(8): A41D31/02D03D15/00D03D13/00B32B33/00D03D15/283D03D15/37D03D15/547
Inventor 王世杰
Owner 王世杰
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