Thin film transistor and manufacturing method thereof, array substrate and display apparatus
A technology of thin film transistor and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve problems such as poor contact between source and drain electrodes and active layer.
Active Publication Date: 2016-03-23
BOE TECH GRP CO LTD
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[0005] The invention provides a thin film transistor, a manufacturing method, an array substrate and a display device, which are used to solve the problem of poor contact between the source and drain electrodes and the active layer in the prior art, thereby improving the stability of the thin film transistor
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[0044]In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0045] Embodiments of the present invention provide a thin film transistor, a manufacturing method, an array substrate and a display device, which are used to solve the problem of poor contact between source and drain electrodes and an active layer in the prior art, thereby improving the stability of the thin film transistor.
[0046] The specific implementation manners of the thin film transistor, the manufacturing method, the array subs...
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The invention discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display apparatus, for solving the problem of poor contact between a source-drain electrode and an active layer in the prior art and improving the stability of a thin film transistor. The manufacturing method of the thin film transistor comprises the following steps: forming an active layer on a substrate array, wherein the thicknesses of a source area and a drain area, for forming the thin film transistor, in the active layer are greater than the thickness of a semiconductor area between the source area and the drain area in the active layer; and forming a grid on the active layer by use of a composition process, forming grooves at portions, which are electrically connected with a source electrode and a drain electrode, of the source area and the drain area, for forming the thin film transistor, in the active layer, and forming patterns of the source electrode and the drain electrode at the grooves.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method, an array substrate and a display device. Background technique [0002] Compared with amorphous silicon thin film transistor (a-SiThinFilmTransistor, TFT), low temperature polysilicon thin film transistor (LowTemperaturePoly-siliconThinFilmTransistor, LTPSTFT) technology has many advantages, such as high mobility, up to about 10-100cm2 / Vs, and can be Preparation under lower temperature conditions (for example, lower than 600°C), flexible substrate selection, lower preparation costs, etc. These characteristics of low-temperature polysilicon thin film transistors have obvious advantages in the preparation of flexible displays, and have become the most important materials for the production of flexible displays in the industry. [0003] An important problem encountered by LTPSTFT at present is that the ohmic contact effect between the...
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IPC IPC(8): H01L21/336H01L29/786H01L27/12H01L29/08
CPCH01L27/12H01L29/0847H01L29/6675H01L29/786H01L29/78618H01L29/78696H01L29/78675H01L27/1222H01L27/127H01L27/1288
Inventor 敏健李小龙许正印高涛李栋张帅
Owner BOE TECH GRP CO LTD