A variable electrode crystal growth furnace

Abstract

The present invention provides a variable electrode crystal growth furnace, comprising: a furnace cylinder with a furnace cylinder opening at the top; a large cover fixed on the furnace cylinder opening, and the large cover has a large cover opening; a small cover fastened on the On the opening of the large cover; the furnace body electrode is located in the furnace cylinder and fixed on the large cover, and the furnace cylinder, large cover, small cover and furnace body electrodes are all provided with circulating water channels. The furnace body electrode includes a furnace body full-ring electrode and two furnace body semi-ring electrodes, and the variable electrode crystal growth furnace also includes a heating rod electrode and a heating rod. The heating rods are evenly distributed on the semi-circular electrode of the heating rod. The heating rod passes through but does not touch the insulating material under the semi-circular electrode of the heating rod on this side, the entire circular electrode of the heating rod, and is bent back to the semi-circular ring of the heating rod on the opposite side. The heating rod below the electrode is on the whole ring electrode. The present invention enables the entire crystal growth furnace to realize a sealed state through the installation and connection among the furnace body, the large cover, the small cover and the electrodes of the furnace body, and provides guarantee for the stability of the temperature field in the growth furnace.

Description

technical field [0001] The invention relates to a heating device related to single crystal growth, in particular to a variable electrode crystal growth furnace. Background technique [0002] Sapphire has many excellent properties and is widely used in many fields of national defense, scientific research and civilian use. In recent years, with the development of the LED industry, sapphire is the most feasible substrate material for its commercialization, and its application market has expanded rapidly. How to grow sapphire crystals accurately and controllably has always been a topic of concern to crystal growth researchers. At present, the methods for growing high-quality and large-sized sapphire crystals mainly include: pulling method, Kyropoulos method, temperature gradient method, heat exchange method, etc. [0003] Among them, the Kyropoulos method is a crystal growth method that grows a single crystal from a molten liquid. It is widely used in the growth of a sapphire ...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a variable electrode crystal growth furnace, which is used to solve the problems of the structure of the temperature field and insufficient thermal stability in the crystal growth furnace of the prior art

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