Power MOSFET packaging thermal resistance comparison device

A technology of comparing device and power, applied in the field of power MOSFET package thermal resistance comparison device, can solve the problems of low accuracy of comparison results and high cost of use of measurement devices, achieve practical production and use, and reduce the effect of current difference

Active Publication Date: 2016-05-11
华羿微电子股份有限公司
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[0005] The invention provides a power MOSFET package thermal resistance comparison device to

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  • Power MOSFET packaging thermal resistance comparison device
  • Power MOSFET packaging thermal resistance comparison device

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[0016] In order to make the objectives, technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0017] The embodiment of the present invention discloses a power MOSFET package thermal resistance comparison device. When the package thermal resistance of the power MOSFET is simply compared to determine its performance, it is more practical than the two methods provided in the foregoing prior art. Moreover, the device has low cost and high contrast accuracy, and is very practical in actual production and use.

[0018] Reference figure 1 As shown, an embodiment of the present invention provides a power MOSFET packaged thermal resistance comparison device, which includes an AC input power supply, an adjustable DC power supply, a switching power supply, a constant current control board, a two-way point thermometer, a power MOSFET, and a heat sink...

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Abstract

The invention provides a power MOSFET packaging thermal resistance comparison device, which comprises an adjustable DC power source, a switch power supply, a constant current control panel, a double-channel point temperature meter, a power MOSFET and a heat radiator. The power MOSFET is arranged on the heat radiator; the constant current control panel accurately controls different power MOSFETs to work in an amplification area and ensures same power consumption; and the double-channel point temperature meter measures the temperature on the surface of the power MOSFET and the temperature of the heat radiator at the lower portion of the power MOSFET. Through the control function of the constant current control panel, the current passing through the power MOSFETs is allowed to be controlled accurately, thereby greatly reducing the current difference since different power MOSFETs have start voltage difference; and meanwhile, under the condition of same power consumption, the temperature on the surface of the power MOSFET and the temperature of the heat radiator at the lower portion of the power MOSFET are measured by the double-channel point temperature meter, and thus packaging thermal resistance of the different power MOSFETs can be compared accurately and quickly.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to a power MOSFET package thermal resistance comparison device. Background technique [0002] For power MOSFETs, its performance is not only related to the electrical parameters of the chip, but also the plastic encapsulant, frame, solder (or adhesive), leads and production process selected in the packaging process will also have a great impact on its performance. One of the parameters that has a greater impact on its performance is the thermal resistance of the package. The size of the thermal resistance of the package indicates its ability to diffuse heat to the outside, which plays a key role in the reliability of the product. Therefore, in actual production and use, it is often necessary to simply compare or measure the package thermal resistance of power MOSFETs to determine their performance. [0003] At present, thermal resistance testers are generally used to ...

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2628
Inventor 刘义芳
Owner 华羿微电子股份有限公司
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