Preparation method of a flexible single-layer nano-thin film memristor

Abstract

The invention discloses a method for preparing a flexible single-layer nanometer thin-film memristor, which uses the holes and ionized oxygen ions generated by the single-layer nanometer thin-film memristor as carriers, relying on the holes and ionized oxygen The principle of changing the amount of ions generated to realize the change of device resistance is to start from the simplification of the preparation process and the chemical formula of the resistive film nano-ceramic material. Raw materials with a lower temperature, combined with a lower calcination temperature; and by partially replacing Ti4+ with X2+ for B-site substitution, the asymmetry of the molecular structure of the resistive film and the amount of holes inside are increased; and it is used in green ceramics A series of technical means such as forming a "flexible" lower electrode with a coating film simplifies the preparation process, shortens the process flow, improves production efficiency, reduces production energy consumption and manufacturing costs, and greatly improves the memristor performance of the memristor.

Description

technical field [0001] The invention relates to a preparation method of a single-layer nano-film memristor, in particular to a preparation method of a flexible single-layer nano-film memristor, and belongs to the application fields of micro-nano electronic devices and nonlinear circuits. Background technique [0002] Memristor (memristor) is the fourth type of passive circuit element after resistance, capacitance and inductance entered the mainstream electronics field. It is a passive circuit element related to magnetic flux and electric charge. As early as 1971, the international pioneer of nonlinear circuit and cellular neural network theory, Leon Chua (Cai Shaotang) theoretically predicted the existence of memristors based on the logical integrity of circuit theory. In 2008, HP Labs built a memristor prototype device experimentally for the first time, which confirmed Leon Chua's theory about memristor and attracted intense worldwide attention. Memristors have novel nonli...

AI Technical Summary

Problems solved by technology

Most of them adopt the switch model and working mechanism similar to HP memristors, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory, and electronic circuit design.

[0006] (2) Commercial production has not yet been realized

[0007] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research

However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor

[0008] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in terms of raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components.

[0015] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:

[0017] 3. The material of the prepared memristor is hard and brittle, which is easy to be broken or damaged due to collision, and is not convenient for transportation

[0018] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

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