A based on sr(ti 1‑x mg x )o 3‑x Preparation method of single-layer nano-film memristor

Abstract

The invention discloses a Sr(Ti 1‑x Mg x )O 3‑x The preparation method of the single-layer nano-film memristor, which uses the holes and ionized oxygen ions generated by the single-layer nano-film memristor under bias voltage as carriers, and relies on the change of the amount of holes and ionized oxygen ions to realize The principle of the change of device resistance, on the basis of the existing technology, starts from the simplification of the preparation process and the chemical formula of the resistive film nano-ceramic material, by omitting the pre-sintering step of the resistive film ceramic material Raw materials with lower temperature, combined with lower calcination temperature; and by using Mg 2+ Partial replacement of Ti 4+ Substituting the B site, increasing the resistance variable film layer Sr(Ti 1‑x Mg x )O 3‑x A series of technical means such as the asymmetry of the molecular structure and increasing the amount of holes inside it simplifies the preparation process, shortens the process flow, improves production efficiency, reduces production energy consumption and manufacturing costs, and greatly improves the performance of memristors. memristive properties.

Description

technical field [0001] The invention relates to a preparation method of a single-layer nanometer film memristor, in particular to a method based on Sr(Ti 1- x Mg x )O 3-x The invention discloses a method for preparing a single-layer nanometer film memristor; it belongs to the application field of micro-nano electronic devices and nonlinear circuits. Background technique [0002] Memristor (memristor) is the fourth passive circuit component after resistors, capacitors and inductors entered the mainstream electronics field, and it is a passive circuit component related to magnetic flux and charge. As early as 1971, Leon Chua, the pioneer of international nonlinear circuit and cellular neural network theory, theoretically predicted the existence of memristor based on the logical integrity of circuit theory. In 2008, Hewlett-Packard Labs built a memristor prototype device experimentally for the first time, which confirmed Leon Chua's theory about memristors and attracted wor...

AI Technical Summary

Problems solved by technology

Most of them adopt the switch model and working mechanism similar to HP memristors, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory, and electronic circuit design.

[0006] (2) Commercial production has not yet been realized

[0007] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research

However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor

[0008] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in terms of raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components.

[0015] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:

[0017] 3. The material of the prepared memristor is hard and brittle, which is easy to be broken or damaged due to collision, and is not convenient for transportation

[0018] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

Images