A kind of preparation method of bipolar nano film memristor

Abstract

The invention discloses a preparation method of a bipolar nanometer film memristor, which uses holes and ionized oxygen ions generated under bias voltage as carriers, and realizes the device by relying on changes in the amount of holes and ionized oxygen ions generated The principle of the change of resistance, on the basis of the existing technology, proceeds from two aspects of simplifying the process and the chemical formula of the resistive film nano-ceramic material: by omitting the pre-sintering step of the resistive film ceramic material, selecting the nano-ceramic sintering temperature to be higher Low raw materials, combined with lower calcination temperature; and by partially replacing Ti4+ with Mg2+ for B-site substitution, to increase the asymmetry of the molecular structure of Sr(Ti1‑xMgx)O3‑x, increase the amount of internal holes, etc. The method simplifies the preparation process, shortens the process flow, reduces production energy consumption and manufacturing cost, and greatly improves the memristor performance of the memristor.

Description

technical field [0001] The invention relates to a preparation method of a single-layer nanometer thin film memristor, in particular to a preparation method of a bipolar nanometer thin film memristor; it belongs to the application field of micro-nano electronic devices and nonlinear circuits. Background technique [0002] Memristor (memristor) is the fourth passive circuit component after resistors, capacitors and inductors entered the mainstream electronics field, and it is a passive circuit component related to magnetic flux and charge. As early as 1971, Leon Chua, the pioneer of international nonlinear circuit and cellular neural network theory, theoretically predicted the existence of memristor based on the logical integrity of circuit theory. In 2008, Hewlett-Packard Labs built a memristor prototype device experimentally for the first time, which confirmed Leon Chua's theory about memristors and attracted worldwide attention. Memristors have novel nonlinear electrical p...

AI Technical Summary

Problems solved by technology

Most of them adopt the switch model and working mechanism similar to HP memristors, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory, and electronic circuit design.

[0006] (2) Commercial production has not yet been realized

[0007] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research

However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor

[0008] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in terms of raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components.

[0015] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:

[0017] 3. The material of the prepared memristor is hard and brittle, which is easy to be broken or damaged due to collision, and is not convenient for transportation

[0018] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

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