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Seed crystal splicing structure applicable to monocrystalline silicon-like ingots

A technology similar to monocrystalline silicon and ingot casting, which is applied in the field of seed crystal splicing structure for similar monocrystalline silicon ingot casting, which can solve problems such as poor process tolerance performance, affecting the quality of single crystal ingot casting, and proliferation of crystal dislocations. Improve the proportion of single crystal area, ensure the quality of single crystal ingot, and easy to grasp the effect

Inactive Publication Date: 2016-05-25
南通友拓新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the inventor has found through experiments that the above-mentioned method still has defects.
Although the bevel splicing structure reduces the generation of gaps to a certain extent, due to the smooth bevel, the seed crystal splicing method may cause deformation of the seed crystal splicing due to pressure during the seed crystal splicing and silicon material filling process, thus affecting the subsequent single crystal ingot casting. quality, put forward high technical requirements for the splicing of seed crystals, and the performance of process tolerance becomes worse
At the same time, during the heating process, the tightly arranged seed crystals may warp due to thermal expansion, and the splicing gap between the seed crystals will become larger, resulting in the proliferation of subsequent crystal dislocations, or the formation of polycrystalline grain boundaries

Method used

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  • Seed crystal splicing structure applicable to monocrystalline silicon-like ingots
  • Seed crystal splicing structure applicable to monocrystalline silicon-like ingots

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Embodiment 1

[0028] like figure 1 As shown, the present invention is applicable to the seed crystal splicing structure of similar monocrystalline silicon ingots, including: a frame seed crystal block 1 for leaning against the inner walls around the crucible, and a frame seed crystal block 1 for placing in the area surrounded by the frame seed crystal block There are several flat seed crystal blocks 2, there is a splicing structure between adjacent flat seed crystal blocks, one frame seed crystal is in an inverted L shape, and the upper end of the frame seed crystal block 1 extends inward to form a pressing block, which is used to press the flat plate seed crystal the perimeter of the block. The splicing structure of the flat seed crystal block is one of a slot structure, a buckle structure, and a trapezoidal structure.

[0029] The process of ingot-like monocrystalline silicon ingot based on this structure, the steps are as follows:

[0030] T1, seed crystal fragments at the bottom of th...

Embodiment 2

[0038] like figure 2 As shown, the difference between the present embodiment and the first embodiment lies only in the splicing structure of the flat seed crystal blocks. Specifically, the flat seed crystal block 2 is provided with a transverse cylindrical hole, and after the adjacent flat seed crystal blocks are spliced ​​together, the horizontal cylindrical holes are joined together to form a long cylindrical cavity, and a silicon rod 3 is inserted in the cylindrical cavity. The gap between the silicon rod and the inner wall of the cylindrical through hole is less than 0.5mm. The silicon rods 3 are obtained by drilling laterally on the seed crystal block by a drilling machine, and the drilled holes left on the seed crystal block after drilling the silicon rods are columnar holes.

[0039] Correspondingly, in T2 of the ingot casting process, the method of splicing flat seed crystal blocks also needs to be adapted.

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Abstract

The invention relates to a seed crystal splicing structure applicable to monocrystalline silicon-like ingots. The seed crystal splicing structure is characterized by comprising a frame seed crystal block leaning against the inner walls around a crucible and multiple flat plate seed crystal blocks placed in an area formed by the frame seed crystal block, wherein a splicing structure is arranged between adjacent flat plate seed crystal blocks; the frame seed crystal block is in an inverted L shape; and the upper end of the frame seed crystal block extends inward to form a press block for pressing the periphery of the flat plate seed crystal blocks. In the invention, since the frame seed crystal block is provided with the press block capable of pressing the flat plate seed crystal blocks, the flat plate seed crystal blocks are fixed and cannot shake after being put into the crucible; and due to the extrusion effect of the frame seed crystal block, the possibility that the flat plate seed crystal blocks are heated to be tilted is reduced, and the quality of monocrystalline ingots is guaranteed. Moreover, with the frame seed crystal block, the flat plate seed crystal blocks can be placed in the crucible in a manner closer to horizontal, thereby laying a foundation for improving the ingot quality.

Description

technical field [0001] The invention relates to a seed crystal splicing structure for quasi-single crystal silicon ingots, and belongs to the field of silicon crystal manufacturing. Background technique [0002] In recent years, silicon monocrystalline and polycrystalline silicon have been widely used in photovoltaic solar cells, liquid crystal displays and other fields. At present, the common manufacturing method of silicon-like single crystal is the directional solidification method. In this method, cuboid seed crystals are laid on the bottom of the flat-bottomed crucible, and the seed crystals are arranged regularly to form a seed crystal layer. The silicon material is placed in a flat-bottomed crucible and laid on the seed crystal layer. Through the temperature control in the melting stage, after the silicon material is melted, the seed crystal gradually melts from the surface in contact with the silicon liquid, and then the directional growth of the silicon ingot is re...

Claims

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Application Information

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IPC IPC(8): C30B11/14C30B29/06
CPCC30B11/14C30B29/06
Inventor 王强黄倩露周海峰邓洁
Owner 南通友拓新能源科技有限公司