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Sputtering target and manufacturing method thereof

A sputtering target and deformation direction technology, applied in the field of sputtering targets, can solve the problems of high grain size, insufficient defect density, coarsening, etc.

Active Publication Date: 2019-01-15
PLANSEE SHANGHAI HIGH PERFORMANCE MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] d) Partially resulting in sufficiently high diffusivity of interface and grain boundary volumes and insufficient defect density;
[0012] e) the curing process results in an unacceptably high coarsening of the grains;

Method used

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  • Sputtering target and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0066] For this, use the following powders:

[0067] - Mo powder with a Fisher particle size of 4.5 μm, an oxygen content of 0.24 at % and a carbon content of 0.03 at %

[0068] - Nb powder with a Fisher particle size of 8 μm, an oxygen content of 1.26 at % and a carbon content of 0.46 at %

[0069] To obtain a Σc / Σo value of 0.7 at a Mo amount of 758 kg and a Nb amount of 81.6 kg, 0.336 kg of carbon black powder with a Fisher particle size of 0.35 μm was mixed with Mo and Nb powders in a mechanical mixer. Four flat plates were fabricated from this powder mixture by cold isostatic pressing at a pressing pressure of 180 MPa. The plates were sintered at a temperature of 2150°C and the heating process was carried out under vacuum for three hours up to a temperature of 1200°C. h 2 It is then used as a process gas. The density of the sintered body is 8.9g / cm 3 (88.6% of theoretical density), the C content is 0.022 at% and the O content is 0.018 at%. The C / O ratio was 1.22.

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Abstract

The present invention involves a splashing target composed of MO alloy. The spatter plating target contains at least one metal in the 5th family of the periodic table.≥80AT %.The average C / O ratio of the spatter plating target is ≥1 (AT % / AT %).According to the invention of spatial plating targets, it can be manufactured by deformation and has a improved spatter plating performance.

Description

technical field [0001] The invention relates to a sputtering target comprising molybdenum (Mo) and at least one metal of group 5 of the periodic table, wherein the average content CM of group 5 metal is 5 at% to 15 at% and the Mo content is ≥ 80 at% . Background technique [0002] Sputtering, also known as cathode atomization, is the physical process by which atoms are separated from the sputtering target by bombardment with energetic ions and transformed into the gas phase. Sputtering targets composed of Mo and containing Group 5 metals are known. Thus, EP 0 285 130 A1 describes a sputtering target consisting of a Mo alloy and containing 50 at % to 85 at % tantalum (Ta). JP 2002 327264 A discloses a Mo alloy containing 2 at % to 50 at % niobium (Nb) and / or vanadium (V) with a relative density of >95%, a flexural strength of >300 MPa and a particle size of <300 μm sputtering target. The sputtering target has a diffuse phase and at least one pure phase or only a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34B22F1/00
CPCC22C1/04C22C27/02C22C27/04C23C14/3407B22F1/00C23C14/3414B22F3/16B22F3/17B22F3/18B22F3/20B22F2201/01B22F2201/10B22F2201/20B22F2301/20C23C14/14H01J37/342H01J37/3423H01J37/3429H01J37/3491
Inventor 尼古劳斯·赖因弗雷德迈克尔·朔贝尔沃尔弗拉姆·克纳布约尔格·温克勒
Owner PLANSEE SHANGHAI HIGH PERFORMANCE MATERIAL