Heat treatment device and heat treatment method

Abstract

The present invention provides a technology capable of preventing sublimates from leaking to the outside of a processing container and obtaining good in-plane uniformity of the film thickness of the coating film when heat-processing a coating film formed on a wafer. When the wafer coated with the SOC film is placed in the processing container (1) and the wafer is heated to allow the cross-linking reaction to proceed, exhaust gas from the central exhaust port (34) at a small flow rate, and exhaust the gas from the peripheral exhaust port. (31) Exhaust gas at a large flow rate while allowing the crosslinking reaction to proceed. In another example, only the exhaust from the peripheral exhaust port (31) is carried out from the start of heating of the wafer, and after 20 seconds from the start of heating of the wafer, in addition to the exhaust from the peripheral exhaust port (31), the central Exhaust port (34) exhausts. In yet another example, only the exhaust from the outer peripheral exhaust port (31) is exhausted from the heating of the wafer for 20 seconds, and then the exhaust from the outer peripheral exhaust port (31) is stopped, and the central exhaust port (34) is exhausted. gas.

Description

technical field [0001] The present invention relates to a heat treatment device, a heat treatment method, and a storage medium for heating the substrate by exhausting the inside of the vessel after placing a substrate coated with a coating liquid in the treatment vessel. Background technique [0002] In semiconductor manufacturing steps, resist patterns tend to collapse due to the refinement of circuit patterns, and various countermeasures have been studied. As one of the countermeasures, a resist pattern is transferred to an underlying film formed on a semiconductor wafer (hereinafter referred to as "wafer"), and the wafer is etched using the pattern of the underlying film as an etching mask. As such an underlayer film, high plasma resistance and high etching resistance are required, and for example, a carbon film (SOC (Spin on Carbon) film) formed by a spin coating method is used. [0003] The wafer coated with the SOC film is heated after the coating process to promote t...

AI Technical Summary

Problems solved by technology

However, when the heating temperature is increased, in addition to the sublimated products sublimated from the crosslinking agent and the like contained in the SOC film, low molecular polymers and the like are also scattered, so the amount of the sublimated products increases.

Therefore, in order to prevent the sublimate from leaking from the processing container to the outside, it is necessary to increase the exhaust volume. However, in this case, the airflow colliding with the central part of the surface of the wafer increases, and the coating film rises, so that the in-plane uniformity of the film thickness is improved. worsening problem

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