Unlock instant, AI-driven research and patent intelligence for your innovation.

A digital igbt parallel active current sharing method

An active current sharing and digital technology, applied in the direction of output power conversion devices, electrical components, etc., can solve the problems of poor current sharing effect, achieve the effect of increasing service life and improving parallel current sharing effect

Active Publication Date: 2018-05-29
XIAN UNIV OF TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a digital IGBT parallel active current sharing method, which solves the problem of poor current sharing effect of the passive current sharing method in the existing IGBT parallel application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A digital igbt parallel active current sharing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] The present invention is a digital IGBT parallel active current sharing method, the process is as follows figure 1 As shown, follow the steps below:

[0028] Step 1. Set the drive resistors in the two IGBT gate drive units to three different resistance values ​​R 1 , R 2 , R 3 , and satisfy R 1 >R 2 >R 3 , and set the initial resistance of both IGBTs to R 2 , wherein the gate drive unit is composed of a gate drive resistor and a MOSFET that controls the connection and disconnection of the drive resistor;

[0029] Step 2, use the RC filter circuit to extract the induced voltage value on the emitter parasitic inductance when the two IGBTs are turned on;

[0030] Step 3. Input the voltage values ​​of the two IGBTs obtained in step 2 into the two zero-crossing comparators respectively, and obtain the time T when the zero-crossing c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a digital IGBT parallel active current sharing method, which specifically follows the following steps: step 1, setting the drive resistances of two IGBTs to three different resistance values; step 2, extracting the voltages when the two IGBTs are turned on respectively value; step 3, input the voltage value of step 2 into two zero-crossing comparators respectively; step 4, input the voltage value of step 2 into two amplitude comparators respectively; step 5, transmit the result of step 3 to CPLD, CPLD determines whether two IGBTs are turned on at the same time; step 6, CPLD adjusts the IGBT turn-on time according to the judgment of step 5; step 7, transmits the result of step 4 to CPLD, and CPLD determines whether the rising slope of the turn-on current is the same; step 8, CPLD Adjust the rising slope of the IGBT turn-on current; step 9, repeat steps 2 to 8 until the rising slopes of the two currents are the same. The invention can effectively improve the current sharing effect of IGBT parallel connection and increase the service life of parallel IGBT.

Description

technical field [0001] The invention belongs to the technical field of IGBT parallel current sharing, and in particular relates to a digital IGBT parallel active current sharing method. Background technique [0002] With the development of semiconductor technology, the capacity of IGBT modules that can be provided by mainstream manufacturers has been greatly increased, but when the system has further expansion requirements, there are usually two options to increase the current capacity: 1) directly select higher power capacity devices; 2) use small and medium power level devices in parallel. However, considering the price and the complexity of the driving circuit, it is the most economical method at this stage to use multiple IGBT modules in parallel to increase the current capacity. The parallel use of IGBT modules can improve the current-carrying capacity of power switching devices, but only when the parallel IGBT modules reach an ideal symmetrical and balanced state in t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/088
CPCH02M1/088H02M1/0012
Inventor 杨媛文阳
Owner XIAN UNIV OF TECH