Digital type IGBT parallel and active current-sharing method
An active current sharing, digital technology, applied in the direction of output power conversion devices, electrical components, etc., can solve problems such as poor current sharing effect, and achieve the effect of improving service life and parallel current sharing effect.
Active Publication Date: 2016-06-22
XIAN UNIV OF TECH
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[0003] The purpose of the present invention is to provide a digital IGBT parallel active current sharing method, which solves the problem of poor current sharing effect of the passive current sharing method in the existing IGBT parallel application
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[0026] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0027] The present invention is a digital IGBT parallel active current sharing method, the process is as follows figure 1 As shown, follow the steps below:
[0028] Step 1. Set the drive resistors in the two IGBT gate drive units to three different resistance values R 1 , R 2 , R 3 , and satisfy R 1 > R 2 > R 3 , and set the initial resistance of both IGBTs to R 2 , wherein the gate drive unit is composed of a gate drive resistor and a MOSFET that controls the connection and disconnection of the drive resistor;
[0029] Step 2, use the RC filter circuit to extract the induced voltage value on the emitter parasitic inductance when the two IGBTs are turned on;
[0030] Step 3. Input the voltage values of the two IGBTs obtained in step 2 into the two zero-crossing comparators respectively, and obtain the time T when the zero-crossing...
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The invention discloses a digital type IGBT parallel and active current-sharing method. The method specifically comprises the steps of 1, setting the drive resistors of two IGBTs at three different resistance values; 2, respectively extracting the voltage values of the two IGBTs in the switched-on state; 3, inputting the voltage values obtained in the step 2 into two zero-crossing comparators respectively; 4, respectively inputting the voltage values obtained in the step 2 into two magnitude comparators; 5, transferring the result of the step 3 to a CPLD and judging whether the two IGBTs are simultaneously switched on or not by the CPLD; 6, according to the judgment result of the step 5, adjusting the switched-on time of the IGBTs; 7, transferring the result of the step 4 to the CPLD, and judging whether the rising slopes of the switched-on currents of the two IGBTs are identical or not by the CPLD; 8, adjusting the rising slopes of the switched-on currents of the two IGBTs by the CPLD; 9, repeating the steps 2-8 till the rising slopes of the switched-on currents of the two IGBTs are identical. According to the technical scheme of the invention, the parallel current-sharing effects of the IGBTs are effectively improved. Meanwhile, the service lives of the IGBT connected in parallel are prolonged.
Description
technical field [0001] The invention belongs to the technical field of IGBT parallel current sharing, and in particular relates to a digital IGBT parallel active current sharing method. Background technique [0002] With the development of semiconductor technology, the capacity of IGBT modules that can be provided by mainstream manufacturers has been greatly increased, but when the system has further expansion requirements, there are usually two options to increase the current capacity: 1) directly select higher power capacity devices; 2) use small and medium power level devices in parallel. However, considering the price and the complexity of the driving circuit, it is the most economical method at this stage to use multiple IGBT modules in parallel to increase the current capacity. The parallel use of IGBT modules can improve the current-carrying capacity of power switching devices, but only when the parallel IGBT modules reach an ideal symmetrical and balanced state in t...
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IPC IPC(8): H02M1/088
CPCH02M1/088H02M1/0012
Inventor 杨媛文阳
Owner XIAN UNIV OF TECH