A kind of organic heterojunction photosensitive field effect transistor with temperature control switch and preparation method thereof
A technology of temperature control switch and field effect transistor, applied in the field of organic heterojunction photosensitive field effect transistor and its preparation, can solve the problems of low mobility of photosensitive organic material, high contact barrier between metal and semiconductor, application limitation, etc. The effect of improving integration, increasing output current and prolonging life
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Embodiment 1
[0033] The method for preparing the above-mentioned organic thin film field-effect transistor of a temperature control switch provided by the present invention comprises the following steps:
[0034] 1) Put the glass substrate into acetone, ethanol, deionized water and ultrasonically clean it for 15 minutes, dry it with nitrogen, put it in a constant temperature drying box, heat vanadium pentoxide to 860 degrees to form a molten state, and pour it into distilled water. Prepare a sol with a concentration of 6%, prepare a thin film by spin coating, the spin coating speed is 450rpm, and the spin coating time is 30 seconds, and the substrate of the spin-coated vanadium pentoxide film is annealed at 480 degrees for two hours to form Vanadium dioxide film;
[0035] 2) On the switch electrode obtained in the step 1), the gate electrode is prepared by vacuum thermal evaporation, and any one or more of metal gold, metal silver, and metal aluminum is selected as the heating source mater...
Embodiment 2
[0044] Change step 3) to prepare an insulating layer on the gate electrode obtained in step 2), spin-coat the aqueous solution of polymethyl methacrylate with a concentration of 9 wt% on the gate electrode at a speed of 3000 rpm, and put 2 hours in a vacuum oven at 80° C.; the rest of the preparation method is exactly the same as in Example 1, and the morphology and device performance of the sensor are the same as in Example 1.
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