Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of organic heterojunction photosensitive field effect transistor with temperature control switch and preparation method thereof

A technology of temperature control switch and field effect transistor, applied in the field of organic heterojunction photosensitive field effect transistor and its preparation, can solve the problems of low mobility of photosensitive organic material, high contact barrier between metal and semiconductor, application limitation, etc. The effect of improving integration, increasing output current and prolonging life

Inactive Publication Date: 2018-05-15
CHINA JILIANG UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In recent years, organic semiconductor devices have developed rapidly, among which organic field effect transistors have shown many better characteristics than non-field effect transistors; organic field effect transistors have simple preparation processes, organic semiconductor materials can be formed into films at low temperatures, and equipment Low cost, the use of organic semiconductors can realize flexible and bendable devices, and can realize the advantages of large-area and low-cost rapid film formation; at present, many organic field effect transistors made of photosensitive materials can absorb photons to change the output current of the device. However, due to the low mobility of photosensitive organic materials and the high contact barrier between metal and semiconductor, the application of photosensitive organic field effect transistors is limited to a certain extent. The above problems can be solved by preparing a buffer layer between the electrode and the organic semiconductor layer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of organic heterojunction photosensitive field effect transistor with temperature control switch and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The method for preparing the above-mentioned organic thin film field-effect transistor of a temperature control switch provided by the present invention comprises the following steps:

[0034] 1) Put the glass substrate into acetone, ethanol, deionized water and ultrasonically clean it for 15 minutes, dry it with nitrogen, put it in a constant temperature drying box, heat vanadium pentoxide to 860 degrees to form a molten state, and pour it into distilled water. Prepare a sol with a concentration of 6%, prepare a thin film by spin coating, the spin coating speed is 450rpm, and the spin coating time is 30 seconds, and the substrate of the spin-coated vanadium pentoxide film is annealed at 480 degrees for two hours to form Vanadium dioxide film;

[0035] 2) On the switch electrode obtained in the step 1), the gate electrode is prepared by vacuum thermal evaporation, and any one or more of metal gold, metal silver, and metal aluminum is selected as the heating source mater...

Embodiment 2

[0044] Change step 3) to prepare an insulating layer on the gate electrode obtained in step 2), spin-coat the aqueous solution of polymethyl methacrylate with a concentration of 9 wt% on the gate electrode at a speed of 3000 rpm, and put 2 hours in a vacuum oven at 80° C.; the rest of the preparation method is exactly the same as in Example 1, and the morphology and device performance of the sensor are the same as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an organic heterojunction photosensitive field effect transistor with temperature control switch and its preparation method, which improves the problem of small output current of the existing organic field effect transistor and makes it have the function of temperature control switch. Function, its structure is shown in Figure 1, including substrate (1), switch electrode (2), gate electrode (3), insulating layer (4), photosensitive organic semiconductor layer (5), electron transport layer (6), A first buffer layer (701), a second buffer layer (702), a source electrode (801), a drain electrode (802), a first encapsulation layer (9), and a second encapsulation layer (10).

Description

technical field [0001] The invention belongs to the field of organic photoelectric sensors, in particular to an organic heterojunction photosensitive field effect transistor with a temperature control switch and a preparation method thereof. Background technique [0002] In recent years, organic semiconductor devices have developed rapidly, among which organic field effect transistors have shown many better characteristics than non-field effect transistors; organic field effect transistors have simple preparation processes, organic semiconductor materials can be formed into films at low temperatures, and equipment Low cost, the use of organic semiconductors can realize flexible and bendable devices, and can realize the advantages of large-area and low-cost rapid film formation; at present, many organic field effect transistors made of photosensitive materials can absorb photons to change the output current of the device. However, due to the low mobility of photosensitive org...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K30/65H10K30/81H10K30/88H10K2102/00Y02E10/549
Inventor 钱宏昌唐莹韦一彭应全
Owner CHINA JILIANG UNIV