A kind of method for preparing alumina crystal substrate by anodic oxidation
A technology of anodic oxidation and alumina, applied in the direction of anodic oxidation, electrolytic coating, surface reaction electrolytic coating, etc., can solve the problems of high cost of sapphire, and achieve the effect of high cost, difficult processing and complete crystal lattice
Inactive Publication Date: 2017-10-13
XINXIANG UNIV
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Problems solved by technology
[0005] In order to overcome the current shortcomings in the processing of single crystal sapphire substrates and the relatively high cost of large-area sapphires, the present invention provides a method for preparing alumina crystal substrates by anodizing high-purity aluminum in an aqueous conductive medium solution
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[0019] 1. Pretreatment of aluminum flakes
[0020] (1) Degreasing treatment
[0021] Select an aluminum sheet with a thickness of 0.2mm and a purity of 99.999%, cut it into an aluminum sheet of 20mm×20mm, put it in acetone and clean it ultrasonically for 15 minutes, and remove the process lubricating oil and other dirt on the surface of the aluminum sheet.
[0022] (2) Annealing treatment
[0023] Place the degreased aluminum sheet on a flat quartz glass sheet and anneal at a temperature of 350°C for 3 hours without air.
[0024] (3) Electrochemical polishing treatment
[0025] The annealed aluminum sheet is then electrochemically polished, the annealed aluminum sheet is used as the anode, the circular copper sheet is used as the cathode, the cathode and anode are parallel to each other, and the mixture of ethanol and perchloric acid with a volume ratio of 5:1 The solution is used as an electrolyte, stirred by magnetic force, and electrolyzed at a voltage of 20V and a tempe...
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Abstract
The invention discloses a method for preparing an alumina crystal substrate by anodic oxidation, and belongs to the technical field of crystal substrate preparation. The main points of the technical scheme of the present invention are: a method for preparing an alumina crystal substrate by anodic oxidation, the specific steps are: the aluminum sheet is sequentially subjected to degreasing treatment, annealing treatment and electrochemical polishing treatment to obtain a pretreated aluminum sheet; The final aluminum sheet is used as the anode, and the platinum electrode is used as the cathode, and anodized in acetic acid solution at 5°C until the aluminum sheet becomes transparent alumina; the obtained alumina substrate is cleaned with high-purity water and then placed in an annealing furnace. In a high-purity oxygen atmosphere, the temperature was raised to 800° C. at a heating rate of 50° C. / s for 1 hour, and then cooled with the furnace to prepare an alumina crystal substrate. The invention can directly obtain a flat and bright aluminum oxide crystal substrate with a clean surface and a complete crystal lattice, and solves the problem of high cost of using large-area sapphire as the substrate.
Description
technical field [0001] The invention belongs to the technical field of preparation of crystal substrates, and in particular relates to a method for preparing alumina crystal substrates by anodic oxidation. Background technique [0002] Electronic devices integrated in the field of modern microelectronics are basically based on thin film materials, and sapphire (R-Al 2 o 3 ) substrates have been widely studied and applied because of their good thermal properties, small dielectric constant and low dielectric loss. Al 2 o 3 The application of the substrate is more and more extensive, and the demand is also more and more. [0003] in Al 2 o 3 Before substrate epitaxial growth of thin film materials, the substrate must be polished to obtain a flat, bright, and clean surface with complete crystal lattice, because the surface quality of the substrate directly affects the quality of the epitaxial layer, the performance of the device and the yield of the product. However, sapph...
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IPC IPC(8): C25D11/04C25D11/16C25D11/18
CPCC25D11/04C25D11/16C25D11/18
Inventor 郭志超李平林申建芳程素君
Owner XINXIANG UNIV