Method for forming through silicon via
A through-silicon via and process technology, which is applied in the field of forming through-silicon vias, can solve the problems of increasing the application ratio of hexafluorocyclobutane and reducing the production efficiency of the doctoral process, and achieve the effect of avoiding silicon damage
Inactive Publication Date: 2016-08-03
SEMICON MFG INT (SHANGHAI) CORP
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However, once the proportion of the plasma etching process increases, it means that the application proportion of hexafluorocyclobutane increases, which will significantly reduce the production efficiency of the entire Ph.D. process
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[0026] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0027] In the prior art, the Bosch process is usually used to etch the TSVs on the silicon substrate, and the above method (that is, increasing the proportion of the plasma etching process) is used to perform silicon damage prevention treatment on the TSVs during the Bosch process. However, in a preferred embodiment of the present invention, the preventive treatment of silicon damage is advanced before the Bosch process. Since the main cause of silicon damage is that the sidewall of the silicon substrate is partially exposed to the plasma above due to the shrinkage of the photoresist covering the silicon substrate, so in a preferred embodiment of the present invention, before the Bosch process The silicon substrate is first etched to form an undercut cut under the photoresist, preventing exposur...
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The invention discloses a method for forming a through silicon via, and belongs to the technical field of semiconductor manufacturing technologies. The method comprises the steps of providing a semiconductor substrate, forming a mask layer with an opening on the semiconductor substrate, etching the semiconductor substrate by adopting a first Bosch etching process so as to form a first groove in the semiconductor substrate below the opening, wherein the mask layer is protruded on the side wall of the first groove, and etching the semiconductor substrate located at the bottom of the first groove by adopting a second Bosch etching process so as to form a second groove, wherein the width of the first groove is greater than the width of the second groove. The technical scheme disclosed by the invention has the beneficial effects that a phenomenon of silicon damages on the side wall of the through silicon via formed by applying a Bosch process is effectively avoided, the whole side wall of the through silicon via is effectively protected, and the etching efficiency of the overall Bosch process is not affected at the same time.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a method for forming through-silicon holes. Background technique [0002] Through silicon via technology (through silicon via, TSV) is a new technical solution for interconnection of stacked chips in three-dimensional integrated circuits. Since the through-silicon via technology can make the stacking density of the chip in the three-dimensional direction the highest, the interconnection line between the chips is the shortest, and the external size is the smallest, it can effectively realize this kind of three-dimensional chip stacking, and create a more complex structure and more powerful performance. , more cost-effective chips, so it has become the most compelling technology in electronic packaging technology. [0003] In the prior art, the through-silicon via technology is usually applied in the semiconductor manufacturing process such as the Om...
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Inventor 倪梁汪新学
Owner SEMICON MFG INT (SHANGHAI) CORP