Check patentability & draft patents in minutes with Patsnap Eureka AI!

Masks and Semiconductor Structures

A semiconductor and mask technology, applied in the direction of semiconductor devices, electrical solid devices, instruments, etc., can solve the problems of reduced reliability, defects, uneven holes in semiconductor structures, etc., and achieve the effect of reducing defects and blind holes and improving uniformity

Active Publication Date: 2019-05-03
MACRONIX INT CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the boundary region (Boundary Region) where the high pattern density device area is close to the low pattern density device area, it is easy to cause uneven holes on the semiconductor structure, or even blind hole (Blind Hole) defects due to the excessive difference in pattern density. , so that the reliability of the product (Reliability) is reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Masks and Semiconductor Structures
  • Masks and Semiconductor Structures
  • Masks and Semiconductor Structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] Figure 1A is a schematic diagram of a mask according to an embodiment of the present invention. figure 2 is applied according to the embodiment of the present invention Figure 1A Top view of the semiconductor structure formed by the mask.

[0047] Please refer to Figure 1A , the mask 10 of the embodiment of the present invention includes a transparent substrate 100 and a shielding layer 102 . The transparent substrate 100 can be, for example, glass, polymer or other suitable transparent materials. In this embodiment, the pattern ratio of the mask 10 is 4 times of the pattern to be transferred, therefore, compared with figure 2 The distance, pattern and size of the semiconductor structure 20 and the distance, pattern and size of the mask 10 described below are magnified by 4 times. But the present invention is not limited thereto. In other embodiments, the distance, pattern and size of the mask 10 can also be enlarged by 1 time, 5 times or 10 times.

[0048] The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
widthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a semiconductor structure and a mask. The semiconductor structure, which is formed on a substrate, includes a first region and a second region. The first region surrounds the second region. The first region has a first pattern density, and the second region has a second pattern density, wherein the first pattern density is lower than the second pattern density. The second region includes a central region and a boundary region. The central region has a first critical dimension, and the boundary region has a second critical dimension, wherein the variance between the first critical dimension and the second critical dimension is less than 6.5%.

Description

technical field [0001] The invention relates to a mask and a semiconductor structure. Background technique [0002] As the critical dimension (Critical Dimension, CD) of the semiconductor structure shrinks day by day, the requirement for the resolution (Resolution) of the photolithography process is also getting higher and higher. Generally speaking, on the same semiconductor structure, there are usually high pattern density device regions (such as memory cell regions or array regions) and low pattern density device regions (such as peripheral regions). In the boundary region (Boundary Region) where the high pattern density device area is close to the low pattern density device area, it is easy to cause uneven holes on the semiconductor structure, or even blind hole (Blind Hole) defects due to the excessive difference in pattern density. , so that the reliability of the product (Reliability) is reduced. Therefore, how to improve the uniformity of the critical dimension of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02G03F1/54
Inventor 蔡丰年
Owner MACRONIX INT CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com