Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Simple second-order non-autonomous memristor chaotic signal generator

A chaotic signal and generator technology, which is applied in the direction of secure communication, instrumentation, and information storage through chaotic signals to achieve the effect of strong stability and significant chaotic characteristics.

Inactive Publication Date: 2016-08-03
CHANGZHOU UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented device uses an electrical current waveform with specific frequency patterns that create chaos when combined together. It generates signals called chaosis because they are caused by certain physical properties or processes within them. These devices have many advantages over existing methods for generating analog waves like oscillators and crystal clocks due their ability to produce more complicated forms of behavior without requiring precise control from external sources. They also provide stable outputs at different frequencies depending on how well these techniques work.

Problems solved by technology

This patents discuss various technical problem addressed in this patented paper: how to create stable and powerful memristing systems without requiring expensive components like inductance coils or transistors due to their complexity and potential instabilities caused by external factors like temperature changes during operation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Simple second-order non-autonomous memristor chaotic signal generator
  • Simple second-order non-autonomous memristor chaotic signal generator
  • Simple second-order non-autonomous memristor chaotic signal generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Mathematical modeling: figure 1 (b) shows the equivalent realization circuit of non-ideal voltage-controlled memristor, and its mathematical model can be described as

[0024] i = ( - G a + G b v 0 2 ) v dv 0 d t = - v ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a simple second-order non-autonomous memristor chaotic signal generator composed of a memristor and capacitor parallel circuit driven by a standard sinusoidal voltage signal. The circuit only includes two dynamic elements as capacitor C 1 with memristive W. The essence of the present invention is to replace the passive LC oscillator in the memristor Chua's circuit with a standard sinusoidal voltage signal to form a simple and novel chaotic signal generator, which can generate chaotic attractors, periodic limit cycles, etc. by adjusting circuit parameters complex nonlinear phenomena. The circuit structure is simple, the stability is strong, and it has significant chaotic characteristics, which plays a greater role in promoting the application and development of memristive circuits.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Owner CHANGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products