A mosfet BSIM4 subcircuit device model and its modeling method
A device model and sub-circuit technology, applied in the fields of instruments, electrical digital data processing, calculation, etc., can solve the problem of insufficient global parameter correction ability, and achieve the effect of increasing the space, improving the simulation accuracy, and expanding the use space.
Active Publication Date: 2018-11-09
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0007] The technical problem solved by the present invention is to provide a MOSFET BSIM4 sub-circuit device model system, which has clear physical meaning and high accuracy, and can reduce the channel length L and channel width W of MOSFETs of different sizes. In order to solve the defect that the traditional MOSFET BSIM4 model has insufficient ability to correct global parameters, the simulation accuracy can be improved.
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[0029] The present invention will be further elaborated below in conjunction with the accompanying drawings and examples. The following examples do not limit the invention. Without departing from the spirit and scope of the inventive concept, changes and advantages that can be imagined by those skilled in the art are all included in the present invention.
[0030] figure 1 Shown is a structure flow chart and implementation steps of a MOSFET BSIM4 subcircuit model system provided by the present invention, which is used to correct the correction values of N global parameters in each direction in the MOSFET device, including the channel length L direction, the channel width W direction and the small device direction, wherein the small device direction refers to the correction in the channel length L direction and the channel width W direction at the same time.
[0031] According to an embodiment of the present invention, when N is 1, taking the 55nm MOSFET model n12 as an exa...
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The invention discloses a MOSFET BSIM4 sub-circuit device model system and a modeling method therefor. The system comprises a standard MOSFET BSIM4 sub-circuit model and a global parameter correction model, wherein the global parameter correction model comprises a current value fitting curve library, a parameter correction module and a calling module; the current value fitting curve library comprises at least one current value fitting curve in a channel length L direction and at least one current value fitting curve in a channel width W direction; the parameter correction module is used for correcting N global parameters required to be corrected in L, W and small device directions; and the calling module is used for calling the corrected global parameters into the standard MOSFET BSIM4 sub-circuit model.
Description
technical field [0001] The invention relates to the field of integrated circuits, in particular to a new BSIM4 sub-circuit device model applied to MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) electrical simulation. Background technique [0002] As the feature size of semiconductor devices decreases and enters the nanometer level, the requirements for electrical simulation models of semiconductor devices are also gradually increasing. The BSIM4 model is currently the most widely used model in the industry for modeling 22nm-130nm standard process MOSFETs. It is relatively mature and has a very high complexity. For details, please refer to the BSIM4 Model Manual (BSIM4Manual). [0003] The standard MOSFET BSIM4 subcircuit model includes the peripheral subcircuit and BSIM4 compact model. In the traditional MOSFET BSIM4 device model, when the channel length and channel width of the MOSFET are reduced, the global par...
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IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 彭兴伟王伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP