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A kind of laser pulse deposition preparation method of cs2sni6 thin film

A technology of laser pulse deposition and thin film, applied in final product manufacturing, sustainable manufacturing/processing, ion implantation plating, etc., can solve the problems of complex chemical reaction process, prone to CsI impurity phase, difficult composition control, etc. The preparation process and operation are simple, the stability and repeatability are good, and the substrate coverage is good.

Active Publication Date: 2018-05-01
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the solution method is difficult to prepare high-quality thin films, not only the chemical reaction process is complicated, the repeatability is poor, and the component control is difficult; while the vacuum evaporation method is not only expensive in equipment, complicated in the process, but also difficult in component control, and prone to CsI impurities.

Method used

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  • A kind of laser pulse deposition preparation method of cs2sni6 thin film
  • A kind of laser pulse deposition preparation method of cs2sni6 thin film
  • A kind of laser pulse deposition preparation method of cs2sni6 thin film

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Experimental program
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Effect test

Embodiment 1

[0021] In this example Cs 2 SnI 6 The preparation method of thin film is realized through the following steps:

[0022] Schematic diagram of the structure of the tube furnace with dual temperature zones used in target sintering and precursor thin film annealing in this embodiment. figure 1 Shown is CsSnI synthesized by solution method 3 The powder is pressed into a cylindrical block in a two-zone tube furnace I 2 Cs obtained by sintering cylindrical bulk under atmosphere 2 SnI 6 target, and then prepared Cs on the glass substrate by the pulsed laser deposition (PLD) method 2 SnI 6 Precursor film, finally in a two-zone tube furnace I 2 Annealing Cs under atmosphere 2 SnI 6 Precursor film, the specific preparation method is:

[0023] 1. CsSnI 3 Preparation of powder: prepare 20mL of CsI aqueous solution with a concentration of 1.55M and SnCl with a concentration of 1.03M 2 Ethanol solution 10mL; SnCl 2 Add the ethanol solution to the CsI aqueous solution and continu...

Embodiment 2

[0029] This embodiment prepares Cs in the same manner as in Example 1 2 SnI 6 Film, the difference is: step 2) pressurized 2MPa.

Embodiment 3

[0031] This embodiment prepares Cs in the same manner as in Example 1 2 SnI 6 Film, the difference is: step 2) pressurized 10MPa.

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Abstract

The invention discloses a laser pulse deposition preparation method for a Cs2SnI6 thin film. The high-quality Cs2SnI6 thin film is obtained by synthesizing CsSnI3 powder through a solution method, obtaining a Cs2SnI6 target material through sintering under the atmosphere of I2, preparing a Cs2SnI6 precursor thin film through a pulse laser deposition (PLD) method and finally conducting annealing treatment on the prepared thin film. The method has multiple beneficial effects that components are controllable, the deposition rate is high, impurity contamination can be prevented, and low-temperature deposition of the high-quality compound thin film can be easily achieved, and the prepared Cs2SnI6 thin film is smooth and uniform in surface and adjustable in thickness, and has good stability in air. The thin film is high in quality and easy to operate and magnify, and technical support is provided for research and application of Cs2SnI6 novel photoelectric materials and devices.

Description

1. Technical field [0001] The invention relates to an inorganic perovskite derivative Cs 2 SnI 6 The invention relates to a method for preparing a thin film by laser pulse deposition (PLD), which belongs to the technical field of photoelectric thin film material preparation. 2. Background technology [0002] Cs 2 SnI 6 CsSnI with perovskite structure 3 A derivative is an n-type semiconductor material with a direct band gap of about 1.32eV, which can exist stably at room temperature and in an all-air environment. And its synthetic raw materials exist in large quantities in nature, are non-toxic and easy to process, and can be synthesized by simple physical and chemical methods. 2 SnI 6 Lumps and powders, etc. It has broad application prospects in optoelectronic devices, such as photodetector materials, solar cell light absorption layer materials, electron and hole transport layer materials, etc. And currently about Cs 2 SnI 6 There are very few studies, and the deve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28H01L31/18H01L31/032
CPCC23C14/28H01L31/032H01L31/18Y02P70/50
Inventor 罗派峰夏伟周圣稳
Owner HEFEI UNIV OF TECH
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