An automated analysis method for essential dislocations in crystal geometry based on synchrotron radiation
An automatic analysis and dislocation technology, which is applied in the identification of molecular entities, special data processing applications, instruments, etc., can solve problems such as the inability to carry out geometrically necessary dislocation analysis of samples
Active Publication Date: 2018-07-03
XI AN JIAOTONG UNIV
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However, the current micro-area Laue diffraction analysis of synchrotron radiation needs to scan the sample point by point to generate at least a thousand diffraction patterns. Researchers need to manually perform complex procedures such as simulation matching and diffraction spot peak type analysis on a single diffraction pattern, and it is impossible to carry out the analysis of the entire sample. Geometrically essential dislocation analysis for
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[0089] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, the following in conjunction with the attached Figure 2a with attached Figure 2b The original atlas of the examples shown is a detailed description of the specific implementation of the present invention.
[0090] attached Figure 2a The original spectrum of the example shown is a nickel-based material spectrum obtained by the known micro-area Laue diffraction experiment of synchrotron radiation, and the diffraction spots are obviously elongated.
[0091] In this embodiment, an automatic analysis method for essential dislocations in crystal geometry based on synchrotron radiation, such as figure 1 shown, including the following steps:
[0092] Step 1: Perform spectrum processing on the original spectrum of the embodiment to obtain binarized spectrum, diffraction spot calibration information and crystal orientation information;...
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The present invention relates to an automatic analysis method for crystal geometry essential dislocations based on synchrotron radiation, comprising the following steps: step 1: obtaining binary atlas, diffraction spot calibration information and crystal orientation information from the original atlas through atlas processing; step two: Establish a dislocation dictionary through crystallographic theory, establish a device model, and simulate the elongation direction by combining the diffraction spot calibration information and crystal orientation information to obtain an alternative elongation direction; Step 3: Use the binarized map, diffraction spot calibration information and The crystal orientation information is calculated by using the graphic calculation method of the diffraction spectrum, the position calculation method of the diffraction spot position and the rotation matrix method of the crystal orientation to calculate the elongation or splitting direction of the diffraction spot and the elongation of the diffraction spot apex; step 4: through the elongation Calculate the elongation or splitting angle of the diffraction spot based on the calibration information of the apex of the diffraction spot and the splitting diffraction spot. Diffraction spot elongation and splitting for identification and matching.
Description
technical field [0001] The invention relates to the technical field of crystal dislocation analysis methods, in particular to an automatic analysis method for crystal geometrically necessary dislocations based on synchrotron radiation, which is suitable for automatic analysis of crystal synchrotron radiation micro-area Laue diffraction data to obtain geometrically necessary dislocations in crystals. Dislocation information of dislocations; this method has the characteristics of high resolution, large penetration depth, high accuracy, high universality, and automatic processing. Background technique [0002] According to the existing dislocation theory, geometrically essential dislocations are dislocations produced by coordinating geometric shape changes when material properties are deformed. The application of geometrically essential dislocation theory can distinguish different plastic deformation processes, which is helpful to measure the deformation strengthening degree of...
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IPC IPC(8): G06F19/00
CPCG16C20/20
Inventor 陈凯朱文欣沈昊
Owner XI AN JIAOTONG UNIV