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A high-performance asymmetric metal oxide-based micro-supercapacitor and its preparation method

A supercapacitor, oxide-based technology, applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of poor matching of positive and negative electrode materials, low coulombic efficiency of devices, and low electrode utilization , to achieve the effect of enhancing pseudocapacitive capacity, improving Coulombic efficiency benefits, and increasing energy and power density

Active Publication Date: 2018-06-26
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current system of electrode materials for symmetrical micro supercapacitors, because the positive and negative electrode materials are not well matched, the utilization rate of the electrodes is not high, and the Coulomb efficiency of the corresponding devices is not high, which limits its practical application. Matching and Establishing a new system of asymmetric electrode materials is a subject of great significance

Method used

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  • A high-performance asymmetric metal oxide-based micro-supercapacitor and its preparation method
  • A high-performance asymmetric metal oxide-based micro-supercapacitor and its preparation method
  • A high-performance asymmetric metal oxide-based micro-supercapacitor and its preparation method

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Effect test

Embodiment 1

[0027] It has a high-performance asymmetric metal oxide-based micro-supercapacitor, which includes the following steps:

[0028] 1) Coat the photoresist 9000A on the silicon wafer substrate with a coater at a speed of 4000rpm, spin coating for 40s, and then bake the glue with a hot plate at 100°C for 15min;

[0029] 2) Fabricate an interdigitated structure with a width of 100 microns by photolithography;

[0030] 3) Physical Vapor Deposition (PVD): Use a thermal evaporation coater to vaporize the metal electrode Cr / Ni (10nm / 100nm);

[0031] 4) After heating the acetone to 50°C and keeping it warm for 15 minutes, put the device in it and let it stand for 1 hour to peel off all the interfingers, then rinse the substrate with acetone and isopropanol, and dry it with nitrogen;

[0032] 5) Apply silver paste to the positive and negative poles of the current collector respectively, be careful not to connect them, and let them stand for 6 hours at room temperature and ventilation; ...

Embodiment 2

[0039] It has a high-performance asymmetric metal oxide-based micro-supercapacitor, which includes the following steps:

[0040] 1) Coat the photoresist 9000A on the silicon wafer substrate with a coater at a speed of 4000rpm, spin coating for 40s, and then bake the glue with a hot plate at 100°C for 15min;

[0041] 2) Fabricate an interdigitated structure with a width of 100 microns by photolithography;

[0042] 3) Physical Vapor Deposition (PVD): Use a thermal evaporation coater to vaporize the metal electrode Cr / Ni (10nm / 100nm);

[0043] 4) After heating the acetone to 50°C and keeping it warm for 15 minutes, put the device in it and let it stand for 1 hour to peel off all the interfingers, then rinse the substrate with acetone and isopropanol, and dry it with nitrogen;

[0044] 5) Apply silver paste to the positive and negative poles of the current collector respectively, be careful not to connect them, and let them stand for 6 hours at room temperature and ventilation; ...

Embodiment 3

[0051] It has a high-performance asymmetric metal oxide-based micro-supercapacitor, which includes the following steps:

[0052] 1) Coat the photoresist 9000A on the silicon wafer substrate with a coater at a speed of 4000rpm, spin coating for 40s, and then bake the glue with a hot plate at 100°C for 15min;

[0053] 2) Fabricate an interdigitated structure with a width of 100 microns by photolithography;

[0054] 3) Physical Vapor Deposition (PVD): Use a thermal evaporation coater to vaporize the metal electrode Cr / Ni (10nm / 100nm);

[0055] 4) After heating the acetone to 50°C and keeping it warm for 15 minutes, put the device in it and let it stand for 1 hour to peel off all the interfingers, then rinse the substrate with acetone and isopropanol, and dry it with nitrogen;

[0056] 5) Apply silver paste to the positive and negative poles of the current collector respectively, be careful not to connect them, and let them stand for 6 hours at room temperature and ventilation; ...

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Abstract

The invention relates to a high-performance asymmetric metal oxide-based miniature super capacitor and a preparation method thereof. The high-performance asymmetric metal oxide-based miniature super capacitor comprises a substrate, and an interdigital electrode formed by current collector metal is deposited on the substrate. The high-performance asymmetric metal oxide-based miniature super capacitor is characterized in that different metal oxides are respectively loaded on two ends of the interdigital electrode, and the metal oxides are manganese dioxide and nickel oxide. The high-performance asymmetric metal oxide-based miniature super capacitor has the advantages that charging and discharging peaks occur in charging and discharging reaction processes, the advantages of the super capacitor in charging and discharging power are retained, the mode in energy storage is more closed to that of a battery, the electrode charge utilization rate is improved, the pseudocapacitance capacity of the device is increased, and the energy and the power density of the capacitor are further improved.

Description

technical field [0001] The invention relates to a supercapacitor, in particular to a high-performance asymmetric metal oxide-based miniature supercapacitor and a preparation method thereof. Background technique [0002] In recent years, the field of micro-supercapacitors has developed rapidly. As the development direction of energy storage devices with great potential, the capacity of energy storage devices and the level of Coulombic efficiency will directly affect the application of devices in practice. Therefore, in maintaining high power of devices Based on the energy storage characteristics of the device, it is of great significance to improve the energy storage capacity and Coulombic efficiency of the device as much as possible for the research and practical application of the device. [0003] At present, microcapacitors can be divided into symmetrical microcapacitors and asymmetrical microcapacitors according to whether the materials of the two microelectrodes of micro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/46H01G11/26H01G11/28H01G11/84H01G11/86
CPCY02E60/13
Inventor 麦立强刘晓威张燎田晓聪
Owner WUHAN UNIV OF TECH
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