Method for polycrystalline silicon ingot casting

A polysilicon ingot furnace and polysilicon technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of high oxygen content in ingot products, difficulty in getting rid of crucible gas, and low melting efficiency. The effect of low input cost, heat reduction, and easy fixation

Inactive Publication Date: 2016-11-09
XIAN HUAJING ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, when annealing polysilicon ingots, there is no unified, standard and standardized method to follow. In actual processing, there are inevitably problems such as relatively random operations, long time-consuming, and poor annealing effects. Therefore, the existing The annealing process also has a great influence on the quality of the finished ingot
[0004] In addition, the heaters used in the existing polysilic

Method used

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  • Method for polycrystalline silicon ingot casting
  • Method for polycrystalline silicon ingot casting
  • Method for polycrystalline silicon ingot casting

Examples

Experimental program
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Effect test

Embodiment 1

[0080] Such as figure 1 A kind of polysilicon ingot casting method of the present invention shown, this method comprises the following steps:

[0081] Step 1, auxiliary heater installation: install the auxiliary heater in the polysilicon ingot furnace 9;

[0082] Such as Figure 5 and Figure 6 As shown, the auxiliary heater is a bottom heater 3 arranged below the crucible 1, the crucible 1 is a cubic crucible and it is arranged horizontally, the bottom heater 3, and the top heater 2 arranged above the crucible 1 and four side heaters 4 respectively arranged on the outside of the four side walls of the crucible 1 form a six-sided heating device; the top heater 2 and the bottom heater 3 are all arranged horizontally, and the four side heaters 4 are arranged vertically; the top heater 2, the bottom heater 3 and the four side heaters 4 are all arranged in the polysilicon ingot furnace 9;

[0083] Step 2, charging: loading silicon material into the crucible 1, and loading the ...

Embodiment 2

[0200] In this example, the difference from Example 1 is that in step 101, the organic binder, deionized water and boron nitride are uniformly mixed at a mass ratio of 1:2:0.8 to obtain a coating spray solution; the organic binder The agent is a silicone adhesive; when spraying in step 102, the inner bottom surface of the crucible 1 is 1m 2 The mass of boron nitride contained in the coating spray liquid sprayed in the area is 100g; when drying in step 103, the drying equipment is used to spray on the inner bottom surface of the crucible 1 at a temperature of 80°C The coating spray liquid is dried, and the crucible 1 is heated to 80° C. by the drying equipment, and then kept warm until the coating spray liquid sprayed on the inner bottom surface of the crucible 1 is dried; the steps The preheating time in the third step is 4h and T1=1285°C, P1=100kW; T2=1400°C in step 401, T3=1560°C in step 402, t=20min in step 403, P2=45kW; Q2=650mbar in step 4 ; In the first step, the holdin...

Embodiment 3

[0210] In this example, the difference from Example 1 is that in step 101, the organic binder, deionized water and boron nitride are uniformly mixed in a mass ratio of 1:2.5:0.8 to obtain a coating spray solution; the organic binder The agent is an epoxy adhesive; when spraying in step 102, the inner bottom surface of the crucible 1 is 1m 2 The mass of boron nitride contained in the coating spray liquid sprayed in the area is 130g; when drying in step 103, the drying equipment is used to spray on the inner bottom surface of the crucible 1 at a temperature of 100°C Dry the coating spray liquid, and first use the drying equipment to heat the crucible 1 to 100°C, and then keep it warm until the coating spray liquid sprayed on the inner bottom surface of the crucible 1 is dried; step The preheating time in the third step is 6h and T1=1125°C, P1=50kW; T2=1350°C in step 401, T3=1540°C in step 402, t=40min in step 403, P2=25kW; Q2=550mbar in step 4 ; In the first step, the holding t...

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Abstract

The invention discloses a method for polycrystalline silicon ingot casting. The method comprises a first step of installation of an auxiliary heater, wherein the auxiliary heater is installed in a polycrystalline silicon ingot furnace, the auxiliary heater is a bottom heater below a crucible, and the auxiliary heater forms a six-side heating device together with a top heater and four side heaters; a second step of charging; a third step of preheating; a fourth step of melting: six-side heating melting, fifth-side heating melting and follow-up melting; a fifth step of crystal growth; a sixth step of annealing and cooling which comprise primary annealing, secondary annealing and cooling, wherein during the primary annealing, the heating temperature of the polycrystalline silicon ingot furnace is reduced to T4 and heat insulation is performed for 2-3 h, and T4=1250-1280 DEG C; during the secondary annealing, the heating temperature of the polycrystalline silicon ingot furnace is reduced to T5 and heat insulation is performed for 2-3 h, and T5=900-950 DEG C. The method is simple in steps, reasonable in design, convenient to implement and good in using effect. The six-side heating device is adopted for heating, the oxygen content of the bottom of the crucible can be effectively reduced; the annealing process is adjusted, and the quality of a finished ingot can be effectively improved.

Description

technical field [0001] The invention belongs to the technical field of polycrystalline silicon ingot casting, and in particular relates to a polycrystalline silicon ingot casting method. Background technique [0002] Photovoltaic power generation is one of the most important clean energy sources with great development potential. The key factors restricting the development of photovoltaic industry are low photoelectric conversion efficiency on the one hand and high cost on the other hand. Photovoltaic silicon wafers are the basic material for the production of solar cells and components. The purity of polysilicon used to produce photovoltaic silicon wafers must be above 6N (that is, the total content of non-silicon impurities is below 1ppm), otherwise the performance of photovoltaic cells will be greatly negative influences. In recent years, the production technology of polycrystalline silicon wafers has made remarkable progress, and the polycrystalline ingot casting techno...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B28/06C30B33/02
CPCC30B29/06C30B28/06C30B33/02
Inventor 李建军刘波波贺鹏史燕凯
Owner XIAN HUAJING ELECTRONICS TECH
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