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Germanium-based gallium arsenide multi-junction flexible film solar cell and preparation method thereof

A flexible thin film and solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as limited application scope, achieve good flexibility, light weight, and improve the application range and weight-to-weight ratio.

Inactive Publication Date: 2016-11-09
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the substrates used in solar cells are rigid materials, and the application range is limited to flat substrates

Method used

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  • Germanium-based gallium arsenide multi-junction flexible film solar cell and preparation method thereof
  • Germanium-based gallium arsenide multi-junction flexible film solar cell and preparation method thereof
  • Germanium-based gallium arsenide multi-junction flexible film solar cell and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] First, the production process, such as figure 1 , 2 , as shown in 3:

[0040] 1. Epitaxial wafer growth:

[0041]The N-type GaInP nucleation layer is sequentially grown on the P-type Ge substrate 33 with a thickness of 175 μm by MOCVD equipment to form the bottom cell 11, the N-type GaAs buffer layer 12, the first tunnel junction 13, the InGaAs middle cell 14, and the second tunnel junction. Junction 15, GaInP top cell 16, N-type AlInP window layer 17 and N-type GaAs contact layer 18 complete the growth of the epitaxial wafer, and the formed battery epitaxial wafer structure is as follows figure 1 shown.

[0042] 2. Production of the upper electrode:

[0043] Such as figure 2 Shown:

[0044] The battery epitaxial wafers that have completed the off-line engraving are cleaned by organic ultrasonic cleaning with acetone and alcohol, and after QDR cleaning and spin-drying, the negative photoresist process is used for electrode grid patterns such as yellow light coati...

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Abstract

A germanium-based gallium arsenide multi-junction flexible film solar cell and a preparation method thereof relate to the technical field of film solar cell production. A relatively mature positively-installed gallium arsenide solar cell process is employed, and a flexible substrate replaces an original relatively thick and heavy rigid substrate. A formed germanium-based multi-junction highly-efficient flexible film solar cell has advantages of bendability and being light, the application scope and weight ratio power of the solar cell are improved, and rocket emission and spaceflight carrying pressure can be released. Upper and lower electrodes are designed on a same side , which facilitates use of the solar cell, the solar cell can be directly welded on a device used or pasted on a soft, light and transparent PI.

Description

technical field [0001] The invention relates to the technical field of production of thin film solar cells. Background technique [0002] Gallium arsenide compound solar cells have always been a research hotspot in various countries, and have been widely valued by people. Compared with traditional silicon-based solar cells, they have higher photoelectric conversion efficiency and excellent reliability, so they have won a lot of attention in the field of space power. Wide range of applications. [0003] The manufacturing method of a conventional solar cell chip is: first grow an N-type GaInP nucleation layer on a P-type Ge substrate to form a low cell, an N-type GaAs buffer layer, a first tunnel junction, an InGaAs middle cell, and a second tunnel junction. junction, GaInP top cell, N-type AlInP window layer, and N-type GaAs contact layer to complete the growth of the epitaxial wafer, and obtain the cell epitaxial wafer. Then the battery epitaxial wafer is acid-cleaned and ...

Claims

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Application Information

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IPC IPC(8): H01L31/0392H01L31/18H01L31/0687H01L31/0693H01L31/0445
CPCH01L31/03926H01L31/0445H01L31/0687H01L31/0693H01L31/1844H01L31/1852H01L31/1896Y02E10/544Y02P70/50
Inventor 吴洪清米万里张双翔涂洁磊徐培强李俊承何胜韩效亚周大勇杨洪东
Owner YANGZHOU CHANGELIGHT
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