Apparatus and method for fabricating fin-fet devices

Abstract

A method of fabricating a Fin-FET device includes forming a plurality of fins in a substrate, wherein the substrate includes a central region and a peripheral region surrounding the central region. A layer of gate material is deposited over the fins, and the gate material layer is etched with an etching gas having a flow rate at the central region to a flow rate at the peripheral region at a ratio ranging from 0.33 to 3 to form the gate supply. The invention also relates to an apparatus for manufacturing Fin-FET devices.

Description

technical field [0001] The present invention relates to integrated circuit devices, and more particularly, to apparatus and methods for fabricating Fin-FET devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone rapid development. In the course of development, the functional density of semiconductor devices has typically increased while device feature size or geometry has decreased. Such scaling down processes typically provide benefits by increasing production efficiency, reducing cost, and / or improving device performance, but increase the complexity of the IC fabrication process. [0003] Similar advances in IC processing and manufacturing are needed to address the increased manufacturing complexity. For example, three-dimensional transistors such as Fin Field Effect Transistors (Fin-FETs) have been introduced to replace planar transistors. In the manufacturing process of Fin-FET devices, there is a continuous need for fur...

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Problems solved by technology

This scaling process typically provides benefits by increasing production efficiency, reducing cost, and / or improving device performance, but adds complexity to the IC manufacturing process

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