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Semiconductor light-emitting diode chip and light-emitting device with the chip

A technology of light-emitting diodes and light-emitting devices, applied in semiconductor devices, lighting devices, optics, etc., can solve the problems of increasing the thickness of display panels, increasing manufacturing costs, and disadvantages

Active Publication Date: 2020-07-24
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This additional optical structure increases manufacturing cost and / or defect rate due to the need to assemble various structures
Specifically, it will disadvantageously increase the thickness of the display panel

Method used

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  • Semiconductor light-emitting diode chip and light-emitting device with the chip
  • Semiconductor light-emitting diode chip and light-emitting device with the chip
  • Semiconductor light-emitting diode chip and light-emitting device with the chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0127] Prepare the structure with figure 1 The illustrated semiconductor light emitting device is structurally similar to the semiconductor light emitting device. As a semiconductor LED chip, a semiconductor LED chip having a peak wavelength of 450 nm was prepared, and as a light distribution adjustment layer, a DBR layer (total thickness: about 712 nm) satisfying the conditions of Table 1 below was formed on the surface of the sapphire substrate of the chip. As a wiring board on which a chip is mounted, a package board whose surface is coated with a silver (Ag) film is used.

[0128] [Table 1]

[0129] serial number Material Thickness (nm) 1 TiO 2

Embodiment 2

[0131] A semiconductor light emitting device using a semiconductor LED chip including a light distribution adjusting layer similar to that of Example 1 was manufactured. However, after installing the chip, with Figure 8 The structure shown is similar, with the addition of a laterally reflective portion formed using a resin containing TiO2 white powder.

Embodiment 3 and comparative example 3

[0140] Preparation of LED package FCOM as an actual commercial product TM . In Example 3, a DBR layer (total thickness: about 712 nm) satisfying the conditions of Table 1 was formed on the surface of the sapphire substrate of the chip. In Comparative Example 3, the same product without the light distribution adjusting layer was used.

[0141] The packages of Example 3 and Comparative Example 3 were operated under the same driving conditions (100 mA / 3.27 V), and the color coordinates, beam angles, and amounts of light emitted therefrom were measured. The light distribution of the package is shown in a two-dimensional (2D) graph ( Figure 10A and Figure 10B ) and polar plots ( Figure 11A and Figure 11B ) shown.

[0142] It can be seen that features such as actual color coordinates hardly change, while beam angle and light distribution change significantly. Specifically, the beam angle of Comparative Example 3 is only 140.5° ( Figure 10B and Figure 11B ), and the be...

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Abstract

The invention provides a semiconductor light emitting device and a display device. The semiconductor light emitting device includes: a wiring board including a mounting surface on which a first wiring electrode and a second wiring electrode are arranged; a semiconductor light emitting diode chip including a first surface on which a first electrode and a second electrode are arranged , the first surface faces the installation surface, the semiconductor light emitting diode chip also includes a second surface positioned opposite to the first surface and a side surface located between the first surface and the second surface, the first electrode and the second electrode are respectively connected to the first wiring electrode and the second wiring electrode; and a reflective layer disposed on at least one of the second surface and the side surface of the semiconductor light emitting diode chip.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Patent Application No. 10-2015-0076572 filed in the Korean Intellectual Property Office on May 29, 2015, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] Apparatuses and apparatuses consistent with exemplary embodiments relate to semiconductor light emitting apparatuses. Background technique [0004] A semiconductor light emitting device such as a light emitting diode (LED) is a device including a light emitting material that converts energy generated by electron-hole recombination in a semiconductor junction portion into light to be emitted therefrom. LEDs are generally adopted as light sources in lighting devices, large liquid crystal displays (LCDs), and backlight units, and the development of LEDs is accelerated. [0005] However, a disadvantage of semiconductor LEDs is that semiconductor LEDs resemble point light sourc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/46H01L33/62
CPCH01L33/46H01L33/48H01L33/62H01L33/508H01L33/56H01L2224/16225F21Y2101/00G02B6/0073
Inventor 金宗仁宋镐荣金容一
Owner SAMSUNG ELECTRONICS CO LTD