Bismuth titanate Bi4-XPrXTi3-XCoXO12 ceramic material and preparation method thereof

A ceramic material, bismuth titanate technology, applied in the field of material science, can solve the problems of deteriorating the ferroelectric properties of materials, reducing the resistivity of materials, etc., and achieve the effects of reduced sintering activation energy, short sintering time, and simple preparation method

Inactive Publication Date: 2017-01-04
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has been proved that ferromagnetic properties can be introduced by doping B-site magnetic ions on bismuth titanate, but at the same time, the resistivity of the material will be greatly reduced, and the ferroelectric properties of the material will be deteriorated, thereby affecting the application range of the material (Palkar V R, Malik SK. Observation of magnetoelectric behavior at room temperature in Pb(Fe 1-x Ti x )O 3 [J].Solid State Communications,2005,134(11):783-786.); (Liu Y,Pu Y,Sun Z.Correlation between lattice distortion and magnetic and electrical properties of Fe-doped Bi 4 Ti 3 o 12 ceramics[J].Journal of Materials ScienceMaterials in Electronics,2015,26(10):7484-7489.)

Method used

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  • Bismuth titanate Bi4-XPrXTi3-XCoXO12 ceramic material and preparation method thereof
  • Bismuth titanate Bi4-XPrXTi3-XCoXO12 ceramic material and preparation method thereof
  • Bismuth titanate Bi4-XPrXTi3-XCoXO12 ceramic material and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0041] Bismuth titanate Bi with high ferroelectricity and high ferromagnetism 4-x PR x Ti 3-x co x o 12 Ceramic material, the chemical expression is Bi 4-x PR x Ti 3-x co x o 12 , where x is the dopant ion Pr 3+ and Co 3+ Mole percent of ions, and x = 0.1.

[0042] The above Bi 3.9 PR 0.1 Ti 2.9 co 0.1 o 12 A method for preparing a ceramic material, comprising the steps of:

[0043] 1) According to the chemical formula Bi 3.9 PR 0.1 Ti 2.9 co 0.1 o 12 Analytical pure Bi 2 o 3 、TiO 2 、Pr 2 o 3 and Co 3 o 4 After being prepared according to the molar ratio, it was mixed evenly by ball milling, and the ball milling time was 10 hours, and then dried, the drying temperature was 100°C, and the drying time was 8 hours. Sieve, pre-calcined at 800°C for 4 hours, and pass through a 120-mesh sieve after the second ball milling to obtain Bi 3.9 PR 0.1 Ti 2.9 co 0.1 o 12 Powder;

[0044] 2) to Bi 3.9 PR 0.1 Ti 2.9 co 0.1 o 12 Granulate after adding PV...

Embodiment 2

[0051] Bismuth titanate Bi with high ferroelectricity and high ferromagnetism 4-x PR x Ti 3-x co x o 12 Ceramic material, the chemical expression is Bi 4-x PR x Ti 3-x co x o 12 , where x is the dopant ion Pr 3+ and Co 3+ Mole percent of ions, and x = 0.2.

[0052] The above Bi 3.8 PR 0.2 Ti 2.8 co 0.2 o 12 A method for preparing a ceramic material, comprising the steps of:

[0053] 1) According to the chemical formula Bi 3.8 PR 0.2 Ti 2.8 co 0.2 o 12 Analytical pure Bi 2 o 3 、TiO 2 、Pr 2 o 3 and Co 3 o 4 After being prepared according to a certain molar ratio, the mixture is uniformly mixed by ball milling, and the ball milling time is 12 hours. Then dry, the drying temperature is 90°C, and the drying time is 10 hours. Sieve, pre-calcined at 750°C for 6 hours, and pass through a 120-mesh sieve after the second ball milling to obtain Bi 3.8 PR 0.2 Ti 2.8 co 0.2 o 12 Powder;

[0054] 2) to Bi 3.8 PR 0.2 Ti 2.8 co 0.2 o 12 Granulate after ...

Embodiment 3

[0061] Bismuth titanate Bi with high ferroelectricity and high ferromagnetism 4-x PR x Ti 3-x co x o 12 Ceramic material, the chemical expression is Bi 4-x PR x Ti 3-x co x o 12 , where x is the dopant ion Pr 3+ and Co 3+ Mole percent of ions. And x=0.3.

[0062] The above Bi 3.7 PR 0.3 Ti 2.7 co 0.3 o 12 A method for preparing a ceramic material, comprising the steps of:

[0063] 1) According to the chemical formula Bi 3.7 PR 0.3 Ti 2.7 co 0.3 o 12 Analytical pure Bi 2 o 3 、TiO 2 、Pr 2 o 3 and Co 3 o 4 After being prepared according to the molar ratio, the mixture is uniformly mixed by ball milling, and the ball milling time is 12 hours. Then dry, the drying temperature is 80 ℃, and the drying time is 12 hours. Sieve, pre-calcine at 700°C for 8 hours, pass through a 120-mesh sieve after the second ball milling to obtain Bi 3.7 PR 0.3 Ti 2.7 co 0.3 o 12 Powder;

[0064] 2) to Bi 3.7 PR 0.3 Ti 2.7 co 0.3 o 12 Granulate after adding PVA b...

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Abstract

The invention provides a bismuth titanate Bi4-XPrXTi3-XCoXO12 ceramic material and a preparation method thereof. The bismuth titanate Bi4-XPrXTi3-XCoXO12 ceramic material is prepared by the following steps: mixing Bi2O3, TiO2, Pr2O3 and Co3O4 at a mol ratio through a solid-phase method, wherein x is a mole percent of doped ions Pr<3+> and Co<3+> ions; after mixing uniformly, pre-sintering a mixture at 700 DEG C to 800 DEG C for 4h to 8h, and then carrying out secondary ball milling and granulation; pressing and molding the mixture in a mold and discharging a PVC (Polyvinyl Chloride) adhesive; sintering by microwaves at 920 DEG C to 1000 DEG C and keeping the heat for 20min to 40min. By carrying out AB site doping of Pr<3+> and Co<3+> on bismuth titanate, the ferroelectric property is improved and the ferromagnetic property of the material is improved. By adopting a microwave sintering manner, low-temperature and rapid sintering is realized, and the bismuth titanate Bi4-XPrXTi3-XCoXO12 ceramic material with high ferroelectric property and high ferromagnetic property is prepared.

Description

technical field [0001] The invention belongs to the field of material science and relates to a bismuth titanate Bi 4-x PR x Ti 3-x co x o 12 Ceramic materials and methods for their preparation. Background technique [0002] At the same time, with the rapid development of computer technology and electronic information technology, people's requirements for electronic components are getting higher and higher, making various electronic devices more highly integrated, multi-functional, miniaturized and fast-responsive. Today's electronic information exchange and storage systems are developing towards smaller volumes and faster storage speeds. Therefore, single-component materials are often difficult to meet the requirements, and there is an urgent need for a new material with high performance or two or more performances at the same time to reduce the consumption of electronic components in the limited space of the circuit board. To further realize the miniaturization of dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475C04B35/622C04B35/626C04B35/64
CPCC04B35/475C04B35/622C04B35/62605C04B35/62615C04B35/62645C04B35/62695C04B35/64C04B2235/3224C04B2235/3277C04B2235/667C04B2235/96
Inventor 杨海波孙雨佳林营张晓婕朱建锋王芬
Owner SHAANXI UNIV OF SCI & TECH
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