A gas reaction chamber for preparing ybco strips by mocvd

A gas reaction chamber and reaction technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of low utilization rate of metal-organic sources, uneven temperature field distribution, uneven film thickness, etc., to achieve Ensure out-of-plane uniformity and consistency, improve utilization rate, and achieve the effect of small diffusion space

Active Publication Date: 2018-07-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the gas ejected from the double shower head structure will lead to uneven distribution of the temperature field directly under the shower head, resulting in uneven thickness of the deposited film, and this deposition method has low utilization rate of metal-organic sources and high cost

Method used

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  • A gas reaction chamber for preparing ybco strips by mocvd
  • A gas reaction chamber for preparing ybco strips by mocvd
  • A gas reaction chamber for preparing ybco strips by mocvd

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with drawings and embodiments.

[0022] figure 1 The slender copper tube in the middle of the reaction chamber is the reaction tube, and the metal substrate baseband deposits thin films in it. The reaction copper tube is wound with a copper conduction belt and connected to the condensation tube outside the reaction chamber. The metal substrate baseband itself is heated by current, and the resulting heat radiation makes the temperature in the reaction copper tube very high. Because copper has good Thermal conductivity, in order to prevent the metal-organic source from reacting before reaching the surface of the substrate base tape, the copper conduction tape can conduct excessive heat to the condenser pipe, effectively inhibiting this from happening. Two copper hoses (10, 11) are respectively connected to the evaporation tube in the MOCVD equipment and the exhaust pipe connected to the vacuum pump. Acc...

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Abstract

The invention belongs to the technical field of thin film preparation, in particular to a gas reaction chamber for preparing YBCO strips by MOCVD. It includes a reaction copper pipe, an intake and exhaust chamber connected to both ends of the reaction copper pipe, and a cooling pipe. The two ends of the reaction copper pipe are connected to the intake and exhaust chamber; the conductive heat is wound around the reaction copper pipe and the cooling pipe; there is a hole in the intake and exhaust chamber, which is in a straight line with the reaction copper pipe in the middle of the reaction chamber. The bottom passes through the pores. When in use, the entire reaction process is only concentrated in the reaction copper tube. The gas enters the reaction chamber and is pumped away, and the diffusion space is small, so the utilization rate of metal-organic sources is greatly improved and the cost is reduced; at the same time, it can be realized on the substrate. The two sides of the film are grown simultaneously, and the out-of-plane uniformity and consistency of the prepared film are guaranteed.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and relates to a gas reaction chamber used for metal-organic chemical vapor deposition (MOCVD), which can be used for the preparation of YBCO superconducting strips, specifically a gas reaction chamber for preparing YBCO strips by MOCVD cavity. Background technique [0002] Metal-organic compound chemical vapor deposition, its English name is Metal-organic Chemical VaporDe7position, abbreviated as MOCVD, is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). Organic compounds of elements and hydrides of group V and VI elements are used as source materials for vapor deposition, and various III-V or II-VI compounds are grown on high-temperature substrates through diffusion, gas-phase reactions, and surface chemical reactions. Thin-layer single-crystal materials of semiconductors and their multicomponent solid solutions. Compared w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/18
CPCC23C16/18C23C16/4411C23C16/455
Inventor 陶伯万赵瑞鹏刘青张宇希李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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