Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor-based first-order high-pass filter circuit

A technology of high-pass filter circuit and memristor, which is applied in the field of basic circuits, can solve problems such as less filtering functions, and achieve the effect of a simple method and circuit

Inactive Publication Date: 2017-03-08
BINZHOU UNIV
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows researchers to study how an electronic device works by creating filters that are simpler than existing methods or devices used with classical electrical components like resistors. These new techniques can help improve performance without adding extra materials or processes.

Problems solved by technology

This patented describes how memory can be used effectively with electronic systems like computers or communication equipment. It suggests that by utilizing these elements instead of complex hardware structures they could make up more efficient ways than traditional methods.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor-based first-order high-pass filter circuit
  • Memristor-based first-order high-pass filter circuit
  • Memristor-based first-order high-pass filter circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Below in conjunction with accompanying drawing and preferred embodiment the present invention is described in further detail, see Figure 1-Figure 2 .

[0021] 1. A first-order high-pass filter circuit based on a memristor, characterized in that: the memristor is composed of a diode 1N4148 Wien bridge circuit, a capacitor and a resistor, the diode 1N4148 realizes the function of a Wien bridge, and the capacitor and resistor form an RC oscillator circuit;

[0022] The anode of the diode D1 is connected to the anode of the diode D4, connected to the input terminal of the memristor, the cathode of the diode D1 is connected to one end of the capacitor C0, connected to the cathode of the diode D2, the anode of the diode D2 is connected to the cathode of the diode D3, connected to the memory The output end of the resistor, the cathode of the diode D2 is connected to one end of the capacitor, the cathode of the diode D3 is connected to the anode of the diode D2, and connected...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a memristor-based first-order high-pass filter circuit. The diode Wien bridge circuit of a first-order general memristor is characterized in that the first-order high-pass filter circuit is formed by a diode 1N4148, a capacitor and a resistor; through the diode 1N4148, the Wien bridge function is achieved; and the capacitor and the resistor form an RC oscillation circuit. According to the invention, based on the diode Wien bridge circuit of the first-order general memristor, a filter circuit, e.g., a first-order low-pass filter, a second-order low-pass filter, a high-pass filter, a band-pass filter and an all-pass filter, in a simulation circuit is achieved; and a simple method and a simple circuit are provided for research of the first-order high-pass memristor formed by the diode Wien bridge.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Owner BINZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products