A high temperature CVD heating coil structure for vacuum chamber
A heating coil structure, heating coil technology, applied in the direction of crystal growth, chemical reactive gases, coatings, etc., can solve the problems of high electrical insulation and air leakage rate of heating coils, and achieve breakthroughs in installation difficulties, high safety, and cost. low effect
Active Publication Date: 2018-11-16
DONGGUAN TIANYU SEMICON TECH
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Problems solved by technology
[0007] For this reason, the present invention proposes a high-temperature CVD heating coil structure for a vacuum chamber to solve the problems of electrical insulation and high gas leakage between the heating coil and the stainless steel chamber, and to realize high-safety "hot wall" SiC epitaxy based on the stainless steel chamber. Low pressure and high temperature epitaxy conditions required for growth equipment
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Embodiment Construction
[0029] The present invention will be further described below in conjunction with specific embodiments and accompanying drawings.
[0030] See Figure 1-9 Shown is a high-temperature CVD heating coil structure for a vacuum chamber, which includes: a stainless steel casing 1 and a copper tube heating coil assembly 200 detachably installed in the stainless steel casing 1 .
[0031] The stainless steel housing 1 is provided with a water-cooling structure, and a closed chamber 10 is formed in the stainless steel housing 1; specifically, the stainless steel housing 1 is in the shape of a cuboid, which includes a chassis 11, a number of The peripheral side plate 12 and the top cover 13 installed on the upper end of the side plate 12, the chassis 11, the side plate 12 and the top cover 13 are all provided with a water cooling structure, and the chassis 11 is provided with a mounting position 111.
[0032] The copper pipe heating coil assembly 200 includes a copper pipe heating coil 2...
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The invention discloses a high-temperature CVD heating coil structure for a vacuum chamber. The high-temperature CVD heating coil structure for the vacuum chamber comprises a stainless steel shell and a copper tube heating coil assembly, wherein the stainless steel shell is provided with a closed cavity; a water-cooling structure is arranged in the stainless steel shell; the copper tube heating coil assembly comprises a copper tube heating coil, a first fixed connecting structure, a second fixed connecting structure and a stainless steel pedestal; the first fixed connecting structure and the second fixed connecting structure are mounted at two ends of the copper tube heating coil; the stainless steel pedestal is connected between the first fixed connecting structure and the second fixed connecting structure; the copper tube heating coil assembly is matched with first screws through the stainless steel pedestal and is locked in the stainless steel shell; the copper tube heating coil is placed in the closed cavity and is provided with a hollow channel which allows cooling water to pass through; a cooling water inlet end and a cooling water outlet end are respectively formed at two ends of the copper tube heating coil, respectively penetrate through the first fixed connecting structure and the second fixed connecting structure, and are exposed out of the stainless steel shell; a first sealing ring is arranged between the first fixed connecting structure and the stainless steel pedestal; a second sealing ring is arranged between the second fixed connecting structure and the stainless steel pedestal; and a third sealing ring is arranged between the stainless steel pedestal and the inner wall of the stainless steel shell.
Description
Technical field: [0001] The invention relates to the technical field of high-temperature vacuum equipment manufacturing, in particular to a high-temperature CVD heating coil structure for a vacuum chamber. Background technique: [0002] Silicon carbide (SiC) is an important wide-bandgap semiconductor material. High-temperature, high-frequency, and high-power SiC devices have great potential in the fields of new energy (photovoltaic power generation and wind power), electric vehicles, motor control, rail transit, power grids, and weapons and equipment. Huge application prospects. [0003] SiC CVD epitaxial material growth occupies an important position in the SiC technology industry chain and plays an important role because: 1. SiC CVD epitaxial material growth is a key technology for SiC power device manufacturing; 2. SiC device structural materials It needs to be realized by CVD epitaxial growth technology, because the diffusion of impurity atoms in SiC below 1800 °C can b...
Claims
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IPC IPC(8): C23C16/46C30B25/10
CPCC23C16/46C30B25/10
Inventor 张新河孙国胜孔令沂王占国李锡光萧黎鑫刘丹
Owner DONGGUAN TIANYU SEMICON TECH