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Pulse solid-state power amplifier and design method

A solid-state power and amplifier technology, used in power amplifiers, amplifiers, high-frequency amplifiers, etc., to reduce the pressure of power supply and heat dissipation

Active Publication Date: 2017-03-15
SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

By improving the microwave power tube grid feed network and the drain feed network, the contradiction between the pulse response time and the power supply efficiency in the existing pulse power amplifier technology is solved, and the rising edge of the nanosecond pulse is realized at a higher efficiency.

Method used

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  • Pulse solid-state power amplifier and design method

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Embodiment Construction

[0039] All features disclosed in this specification, or steps in all methods or processes disclosed, may be combined in any manner, except for mutually exclusive features and / or steps.

[0040] Any feature disclosed in this specification, unless specifically stated, can be replaced by other alternative features that are equivalent or have similar purposes. That is, unless expressly stated otherwise, each feature is one example only of a series of equivalent or similar features.

[0041] Relevant description of the present invention:

[0042] 1. The grid bias circuit is to provide the required grid voltage to the power tube to make it conduct. The drain bias circuit is to provide the DC energy required for power tube amplification. Both the amplifier input matching network and the amplifier output matching network are designs in the prior art. The gate stabilizing circuit supplies the negative voltage, and the drain feed network supplies the positive voltage.

[0043] 2. Ge...

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Abstract

The invention relates to the technical field of pulse solid-state power amplifiers, and provides a pulse solid-state power amplifier and a design method specific to the problems in the prior art. A microwave power transistor grid feedback network and a drain feedback network are improved, so that the contradiction between pulse response time and power supply efficiency in an existing pulse power amplification technology is eliminated, and a nanosecond pulse rising edge is realized under relatively high efficiency. The drain feedback network is an n-level pi-type network; an nth-level pi-type network comprises an nth capacitor and an nth inductor; a grid voltage temperature compensation circuit is connected with one input end of an input impedance matching network through the grid feedback network; a radio-frequency signal is input into the other input end of the input impedance matching network; an output end of the input impedance matching network is connected with a microwave power transistor grid; the microwave power transistor grid is connected with one input end of an output impedance matching network; and a microwave power transistor is biased at a C-type static working point after the radio-frequency signal passes through the input impedance matching network.

Description

technical field [0001] The invention relates to the technical field of pulsed solid-state power amplifiers, in particular to a pulsed solid-state power amplifier and a design method thereof. Background technique [0002] Under the existing technology, it is difficult to balance the high-speed rising edge and high efficiency index of the pulsed solid-state power amplifier. For pulse power amplifiers, the rate of change of the supply current will directly affect the rising edge of the pulse. If the power amplifier is biased in the class A working state, the current in the static state and the full power state are almost unchanged, and the rising edge time can be very short, but it is well known that the class A power amplifier has low efficiency and consumes a lot of power in the pulse state. In order to ensure the efficiency of the power amplifier, the power tube is usually biased in a state close to Class B or Class C. The quiescent current of the power amplifier is very sm...

Claims

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Application Information

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IPC IPC(8): H03F1/30H03F1/56H03F1/02H03F3/19H03F3/21
CPCH03F1/0211H03F1/30H03F1/56H03F3/19H03F3/21
Inventor 罗嘉王海龙谭世川王洪
Owner SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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