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A method for preparing large-area photonic crystal scintillators by imprinting technology

A photonic crystal, large-area technology, applied in the field of nuclear radiation measurement, can solve the problem of insufficient depth of nano-imprinting, and achieve the effect of avoiding damage

Inactive Publication Date: 2018-07-03
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing large-area photonic crystal scintillators by imprinting technology in order to overcome the problem of insufficient nano-imprint depth of large-area plastic scintillators

Method used

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  • A method for preparing large-area photonic crystal scintillators by imprinting technology
  • A method for preparing large-area photonic crystal scintillators by imprinting technology
  • A method for preparing large-area photonic crystal scintillators by imprinting technology

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Experimental program
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Effect test

Embodiment 1

[0032] Photonic crystals were prepared on the surface of EJ212 plastic scintillator (matrix is ​​polyvinyl toluene). The selected template structure was a columnar periodic array with a triangular structure, the period was 600nm, the diameter of the pillar was 300nm, and the height was 300nm. The template had a diameter of 101.6mm, the area is 8103mm 2 The circular template, the template material is silicon.

[0033] The preparation process is as follows:

[0034] Step 1: Cut and polish the EJ212 plastic scintillator to obtain a scintillator with a flat surface. The size is a square with a side length of 120mm and a thickness of 1mm. This size is slightly larger than the size of the template. Prepare two identical samples, one of which is according to The parameters provided by this patent are prepared (sample A), and the other piece is used as a reference sample (sample B), prepared at a lower temperature and pressure, as a control, showing the validity of the parameters in ...

Embodiment 2

[0047] A method for preparing a large-area photonic crystal scintillator by imprinting technology, using the following steps:

[0048] (1) Select a size larger than 400mm 2 The imprint template and the required plastic scintillator of polyvinyltoluene as the matrix material, the imprint template is an array formed by columnar metal units distributed periodically in a triangular structure, the distance between adjacent metal units is 600nm, and the metal units The diameter of the metal unit is 300nm, the height of the metal unit is 300nm, the plastic scintillator and the imprint template are in a complementary structure, and it is a periodic array of holes in a triangular structure. The distance between adjacent holes is 600nm, the hole diameter is 300nm, and the hole depth is 270nm. The area is slightly larger than the imprint template.

[0049] (2) Anti-adhesive treatment is carried out on the template, and the anti-adhesive material perfluorooctyltrichlorosilane is evaporat...

Embodiment 3

[0056] A method for preparing a large-area photonic crystal scintillator by imprinting technology, using the following steps:

[0057] (1) Select a size larger than 400mm 2 The imprint template and the required plastic scintillator with polystyrene as the matrix material, the imprint template is an array of columnar metal units distributed periodically in a triangular structure, the distance between adjacent metal units is 600nm, the metal unit The diameter is 300nm, the height of the metal unit is 300nm, the plastic scintillator and the imprint template have a complementary structure, which is a periodic array of holes in a triangular structure, the distance between adjacent holes is 600nm, the hole diameter is 300nm, the hole depth is 270nm, and the area Slightly larger than the imprint template.

[0058] (2) Anti-adhesive treatment is carried out on the template, and the anti-adhesive material perfluoroquinyltrichlorosilane is vapor-deposited on the surface of the template...

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Abstract

The invention relates to a method for fabricating a large-area photonic crystal scintillation body by an imprinting technology. The method comprises the steps of selecting an imprinting template and a required plastic scintillation body, performing anti-adhesion processing on the template, performing hot nanometer imprinting on the plastic scintillation body by the template subjected to the anti-adhesion processing, separating the temperature after being subjected to imprinting process from the plastic scintillation body so that a photonic crystal structure supplementary to a template pattern is acquired, wherein the size of the imprinting template is larger than 400 mm<2>, and the hot nanometer imprinting is performed by employing a special heating and pressurizing mode. Compared with the prior art, the method has the advantages that the large-area photonic crystal scintillation body can be fabricated, the photonic crystal structure with an enough depth can be acquired according to temperature and pressure parameters, and the template or a sample can be prevented from being damaged during the fabrication process.

Description

technical field [0001] The invention belongs to the field of nuclear radiation measurement, in particular to a method for preparing a large-area photonic crystal scintillator by embossing technology. Background technique [0002] Plastic scintillator is an important member of the scintillator family, and has important applications in nuclear radiation measurement, especially neutron measurement, neutron gamma screening measurement and beta ray measurement. The refractive index of plastic scintillators is usually between 1.4 and 1.6. When scintillation light enters the air, it will encounter total reflection at the interface, thus limiting the effective output of light. One way to improve the light output is to prepare photonic crystal structures on the surface of plastic scintillators, and use the coupling effect of total internal reflection light and photonic crystal structures to generate effective extraction modes, thereby increasing the light output, thereby improving th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00
CPCG03F7/0002
Inventor 刘波程传伟顾牡陈鸿陈亮刘金良欧阳晓平
Owner TONGJI UNIV
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