Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of conception involving semiconductor devices and their manufacturing, can solve the problems of multi-gate transistor current control ability and increase gate length

Active Publication Date: 2020-12-08
SAMSUNG ELECTRONICS CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current control capability of a multi-gate transistor increases without increasing its gate length

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Hereinafter, exemplary embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. However, the inventive concepts may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity. It will also be understood that when an element is referred to as being "on" another element or substrate, it can be directly on the other element or substrate, or intervening layers may also be present. It will also be understood that when an element is referred to as being "coupled" or "connected" to another element, it can be directly coupled or connected to the other element or intervening elements may also be present. Throughout the specification and drawings, like reference numerals may refer to like elements.

[0026] In the following, reference will be made to Figures 1 to 5 A semiconductor device acco...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a fin pattern including first and second oxide regions in an upper portion of the fin pattern. The fin pattern extends in the first direction. The first nanowire extends in a first direction and is spaced apart from the fin pattern. The gate electrode surrounds the periphery of the first nanowire and extends in a second direction crossing the first direction. The gate electrode is disposed on a region of the fin pattern. The region is located between the first oxide region and the second oxide region. The first source / drain is disposed on the first oxide region and connected to the end portion of the first nanowire.

Description

technical field [0001] The inventive concepts relate to semiconductor devices and methods of manufacturing the same. Background technique [0002] Multi-gate transistors have been proposed to integrate multiple transistors without degrading their performance. A multi-gate transistor includes a three-dimensional channel. The current control capability of a multi-gate transistor can be increased without increasing its gate length. In addition, short channel effects (SCE) can be suppressed. Contents of the invention [0003] According to an exemplary embodiment of the inventive concept, there is provided a semiconductor device as follows. The fin pattern includes first and second oxide regions in an upper portion of the fin pattern. The fin pattern extends in the first direction. The first nanowire extends in a first direction and is spaced apart from the fin pattern. The gate electrode surrounds the periphery of the first nanowire and extends in a second direction cros...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66795H01L29/7855H01L29/66545H01L29/78696H01L29/42392H01L29/0673H01L2029/7858
Inventor 金东权徐康一
Owner SAMSUNG ELECTRONICS CO LTD