Preparation method of PbS quantum dots

A quantum dot and solution technology, which is applied in the field of compound semiconductor nanomaterial preparation, can solve the problems of high cost and complex preparation method of PbS quantum dots, and achieve the effects of low cost, high crystallinity, and less stringent environmental requirements

Active Publication Date: 2017-05-31
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the object of the present invention is a method for preparing PbS quantum dots, in which the key preparation method principles and the reaction conditions of each step of the reaction are improved, compared with the prior art. The ratio can effectively solve the problems of complex and high-cost preparation methods of PbS quantum dots, and the nanoparticles prepared by the present invention have the characteristics of high crystallinity, uniform size, stability, good optical properties, etc., which are very beneficial to play the role of PbS quantum dots. various characteristics

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  • Preparation method of PbS quantum dots

Examples

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Embodiment 1

[0035] This embodiment includes the following steps:

[0036] (1) Weigh 0.417g of lead chloride and 5ml of OLA in a two-necked reaction flask, and vacuumize the mixture.

[0037] (2) The mixture was heated to 140° C. for 30 minutes, then the mixture was lowered to 120° C., and 2 ml of ZnS nanorod solution was quickly injected and kept for 3 minutes.

[0038] (3) After the reaction is completed, the temperature is lowered to room temperature, and ethanol is added for centrifugation, then n-hexane is added for centrifugation, filtered, and ethanol is added for centrifugation to obtain PbS quantum dots.

[0039] The properties of the obtained PbS quantum dots are characterized as:

[0040] Get PbS quantum dot solution, measure its optical absorption in fluorescence spectrometer, its absorption spectrum is as follows figure 1 -a shown.

[0041] Measure the PbS quantum dot diffraction pattern on the X-ray diffractometer, such as figure 2 shown.

Embodiment 2

[0043] This embodiment includes the following steps:

[0044] (1) Weigh 0.417g of lead chloride and 5ml of OLA in a two-necked reaction flask, and vacuumize the mixture.

[0045](2) The mixture was heated to 140° C. for 30 min, then the mixture was raised to 190° C., and 2 ml of ZnS nanorod solution was quickly injected and kept for 20 s.

[0046] (3) After the reaction is completed, the temperature is lowered to room temperature, and ethanol is added for centrifugation, then n-hexane is added for centrifugation, filtered, and ethanol is added for centrifugation to obtain PbS quantum dots.

[0047] The properties of the obtained PbS quantum dots are characterized as:

[0048] Get PbS quantum dot solution, measure its optical absorption in fluorescence spectrometer, its absorption spectrum is as follows figure 1 -b shown.

[0049] Measure the PbS quantum dot diffraction pattern on the X-ray diffractometer, and figure 2 resemblance.

Embodiment 3

[0051] This embodiment includes the following steps:

[0052] (1) Weigh 0.417g of lead chloride and 5ml of OLA in a two-necked reaction flask, and vacuumize the mixture.

[0053] (2) The mixture was heated to 140° C. for 30 minutes, then the mixture was raised to 190° C., and 2 ml of ZnS nanorod solution was quickly injected and kept for 5 minutes.

[0054] (3) After the reaction is completed, the temperature is lowered to room temperature, and ethanol is added for centrifugation, then n-hexane is added for centrifugation, filtered, and ethanol is added for centrifugation to obtain PbS quantum dots.

[0055] The properties of the obtained PbS quantum dots are characterized as:

[0056] Get PbS quantum dot solution, measure its optical absorption in fluorescence spectrometer, its absorption spectrum is as follows figure 1 -c shown.

[0057] Measure the PbS quantum dot diffraction pattern on the X-ray diffractometer, and figure 2 resemblance.

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Abstract

The invention discloses a preparation method of PbS quantum dots. The preparation method comprises the following steps of (1) mixing a halogen compound of lead with oleylamine to form a mixture, heating the mixture to 80-150 DEG C in an inert atmosphere, and carrying out heat preservation to obtain an oleylamine solution of lead halide; and (2) injecting a ZnS nano-rod solution prepared in advance into the oleylamine solution of the lead halide, and reacting at a temperature of 80-190 DEG C to obtain a reaction product comprising the PbS quantum dots. Through modification of the critical preparation method principle and the reaction conditions of various steps, compared with the prior art, the preparation method has the advantages that the problems that the preparation method of the PbS quantum dots is complicated and high in cost can be effectively solved, and prepared nanoparticles have the characteristics of high crystallinity, size uniformity and stability and good optical characteristics and are very beneficial to development of various characteristics of the PbS quantum dots.

Description

technical field [0001] The invention belongs to the technical field of preparation of compound semiconductor nanomaterials, and more specifically relates to a preparation method of PbS quantum dots, that is, a preparation method of lead sulfide quantum dots. Background technique [0002] Semiconductor quantum dots are quasi-zero-dimensional nanomaterials. When the particle size enters the nanoscale, size confinement will cause size effects, quantum confinement effects, macroscopic quantum tunneling effects, and surface effects, thus deriving nanosystems different from The low-dimensional physical properties of macroscopic and microscopic systems exhibit many physical and chemical properties different from macroscopic materials. [0003] As a group IV-VI semiconductor material, PbS quantum dots are also important π-π bond semiconductor materials. It has a narrow direct bandgap. Compared with other semiconductor quantum dots, its exciton radius is 18nm, which makes it easy t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/66B82Y20/00B82Y40/00C01G21/21
CPCB82Y20/00B82Y40/00C01G21/21C01P2002/72C01P2004/04C01P2004/64C09K11/661
Inventor 张建兵张志明张长旺黄震张道礼
Owner HUAZHONG UNIV OF SCI & TECH
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