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A small magnetic field measurement method

A magnetic field measurement and magnetic field technology, applied in the field of measurement for small magnetic field strength, to achieve the effect of high measurement accuracy

Active Publication Date: 2019-02-19
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the existing calculation model will not be able to measure and calculate the small magnetic field more accurately

Method used

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Embodiment Construction

[0019] All features disclosed in this specification, or steps in all methods or processes disclosed, may be combined in any manner, except for mutually exclusive features and / or steps.

[0020] Any feature disclosed in this specification, unless specifically stated, can be replaced by other alternative features that are equivalent or have similar purposes. That is, unless expressly stated otherwise, each feature is one example only of a series of equivalent or similar features.

[0021] Such as figure 1 , two reluctance resistors are arranged in the small magnetic field to be measured, preferably the two reluctance resistors are arranged at an angle of 90°, and more can be arranged in other embodiments, such as setting four resistors, four The resistors are arranged in a "ten" shape.

[0022] Measure the resistance R of the two magnetoresistive resistors in the small magnetic field to be tested 1 , R 2 .

[0023] The resistance value R of one of the magnetoresistive resis...

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Abstract

The invention discloses a small magnetic field measurement method, and relates to the technical field of magnetic field measurement. According to the employed technical scheme, the method comprises the steps: 1, collecting the resistance values R1 and R2 of at least two reluctance resistors in a to-be-measured magnetic field, wherein the two reluctance resistors form an inclined angle theta'; 2, substituting the resistance value R1 of one reluctance resistor and the intrinsic parameters of the reluctance resistor into a formula: R=kmcos(theta-theta 0)H+H0, substituting the resistance value R2 of the other reluctance resistor and the intrinsic parameters of the reluctance resistor into a formula: R=kmcos(theta - theta 0 - theta')H+H0, and obtaining binary equation groups; 3, solving the two binary equation groups, and obtaining the magnetic field intensity H and the direction theta of the to-be-measured magnetic field.

Description

technical field [0001] The invention relates to the technical field of magnetic field measurement, in particular to a method for measuring small magnetic field strength. Background technique [0002] When the magnetic resistance is small when the magnetic field to be measured is small (the magnetic field strength is less than 0.1H AF , H AF is the anisotropy field of the free layer of the magnetoresistive resistance, and the H of the different magnetoresistive resistance AF It is different, generally speaking, it is tens of Oe. Oe is the unit of magnetic field strengthOersted) has good linearity and good measurement accuracy. The existing small magnetic field measurement method believes that the sensitivity is the highest in the direction of the difficult axis of the magnetoresistance resistance (that is, the angle between the direction of the magnetic field and the direction of the easy axis is 90°), and this direction is used when calculating the magnitude and directio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/09
CPCG01R33/09
Inventor 欧阳勇胡军何金良王善祥赵根王中旭曾嵘庄池杰张波余占清
Owner TSINGHUA UNIV