A ZNSB-based film with high-efficiency thermoelectric conversion characteristics and its preparation method

A thermoelectric conversion and thin film technology, applied in vacuum evaporation coating, coating, sputtering coating and other directions, can solve the problem of low thermoelectric characteristics of ZnSb-based thin films, and achieve the effect of improving thermoelectric characteristics and optimizing film structure

Active Publication Date: 2019-05-14
SHENZHEN UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above deficiencies in the prior art, the object of the present invention is to provide a ZnSb-based thin film with high-efficiency thermoelectric conversion properties and a preparation method thereof, aiming at solving the problem of low thermoelectric properties of the existing ZnSb-based thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A ZNSB-based film with high-efficiency thermoelectric conversion characteristics and its preparation method
  • A ZNSB-based film with high-efficiency thermoelectric conversion characteristics and its preparation method
  • A ZNSB-based film with high-efficiency thermoelectric conversion characteristics and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Magnetron co-sputtering technology is used to prepare ZnSb-based thin films. Firstly, Sb and Zn targets with a purity of 99.99% are fixed on the two-station target holders of the sputtering system; BK7 optical glass is used as the substrate, and BK7 The optical glass is placed in a container and ultrasonically cleaned with acetone, alcohol and deionized water in sequence; the background vacuum of the sputtering system is pumped to 6.0×10 - 4 Pa, the flow rate is 6sccm high purity Ar gas, the working pressure is controlled at 6.0×10 -2 Pa; Increase the power of the magnetron sputtering system to deposit Sb and Zn on the BK7 optical glass, and the co-sputtering deposition time is 30 minutes.

[0039] After the deposition is completed, the ZnSb-based thin film sample is fixed on the bombardment station frame of the plasma beam bombardment system; the vacuum degree of the plasma beam bombardment system is pumped to 6.0×10 -4 Pa, high-purity argon with a flow rate of 10 sccm, w...

Embodiment 2

[0042] The difference from Example 1 is that the plasma beam is replaced with nitrogen.

Embodiment 3

[0044] The difference from Embodiment 1 is that the plasma beam energy is changed to 0.1 KeV.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an efficient thermoelectric conversion characteristic ZnSb based thin film and a preparing method thereof. The method includes the following steps that plasma beams are adopted, bombardment is carried out on an original ZnSb based thin film, and the efficient thermoelectric conversion characteristic ZnSb based thin film is obtained by controlling the plasma beam bombardment parameter. According to the efficient thermoelectric conversion characteristic ZnSb based thin film and the preparing method, the plasma beams are adopted for bombardment of the thin film, a traditional heat treatment process is replaced, and chemical components of thin film key factors can be guaranteed; and meanwhile, microstructures of the ZnSb based thin film can be controlled; and through effective thin film structural optimization, thermoelectric characteristics of the ZnSb based thin film are improved accordingly.

Description

Technical field [0001] The invention relates to the field of thermoelectric functional materials, in particular to a ZnSb-based film with high-efficiency thermoelectric conversion characteristics and a preparation method thereof. Background technique [0002] With the survival and development of mankind, energy consumption is increasing rapidly, and the environmental pollution problem caused by the use of traditional energy is becoming increasingly severe. The use of renewable energy and industrial waste heat has extremely important practical significance for energy conservation and environmental protection. The development of green new energy technologies has received extensive attention and attention from countries all over the world. As a new energy material, thermoelectric materials can directly convert heat and electric energy into each other, without mechanical parts operation and media participation, and no chemical reaction. Like solar energy, water energy, wind energy an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/18C23C14/35C23C14/46
CPCC23C14/185C23C14/35C23C14/46
Inventor 郑壮豪范平梁广兴罗景庭
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap