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Flash system and LSB page quick backup method and apparatus

A backup and flash memory technology, applied in the field of flash memory systems and devices for quickly backing up LSB pages, can solve the problems of reducing the write performance of multi-layer storage units NAND flash memory, wasting storage space, etc. The effect of backing up storage space and improving system performance

Inactive Publication Date: 2017-07-07
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the above related technologies also have the following defects: the way of backing up relevant LSB pages will cause more pages to be programmed, which wastes storage space and reduces the write performance of the multi-layer storage unit NAND flash memory

Method used

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  • Flash system and LSB page quick backup method and apparatus
  • Flash system and LSB page quick backup method and apparatus
  • Flash system and LSB page quick backup method and apparatus

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0025] refer to figure 2 , which shows a flow chart of the steps of a method embodiment of quickly backing up LSB pages of the present invention, which may specifically include the following steps:

[0026] S1, receiving user data to be written into the NAND flash memory of the multi-layer storage unit; the NAND flash memory of the multi-layer storage unit is divided into a first block area and a second block area.

[0027] Among them, the multi-layer storage unit NAND flash memory can be MLC NAND flash memory, or TLC NAND flash memory in which user data is not written in each page in the basic storage unit at the same time, or QLC NAND flash memory in which user data is not written in each page in the basic storage unit at the same time Wait. It should be noted that, in the first block area, each page in each unit can be operated. In the second block area, only the LSB page in each unit can be manipulated. That is, the second area is different from the first area only in ...

Embodiment 2

[0035] refer to Figure 5 , which shows a flow chart of the steps of another embodiment of the method for quickly backing up LSB pages of the present invention, which may specifically include the following steps:

[0036] S51. Receive user data to be written into the NAND flash memory of the multi-layer storage unit; the NAND flash memory of the multi-layer storage unit is divided into a first block area and a second block area.

[0037] S52. Write user data into the first block area, wherein, before writing the user data into the MSB page in the first block area, back up the user data in the LSB page corresponding to the MSB page to the LSB page in the second block area.

[0038] S53. Establish a mapping relationship between the user data and the corresponding storage space in the second area.

[0039] For example, refer to Figure 4 , user data A, B, C, D are stored in page 1 in the second block area, user data E, F, G, H are stored in page 3 in the second block area, user...

Embodiment 3

[0045] refer to Figure 6 , which shows a structural block diagram of an embodiment of an apparatus for quickly backing up LSB pages of the present invention, which may specifically include the following modules:

[0046] The data receiving module 1 is used for receiving user data to be written into the NAND flash memory of the multi-layer storage unit; the NAND flash memory of the multi-layer storage unit is divided into a first block area and a second block area.

[0047] Among them, the multi-layer storage unit NAND flash memory can be MLC NAND flash memory, or TLC NAND flash memory in which user data is not written in each page in the basic storage unit at the same time, or QLC NAND flash memory in which user data is not written in each page in the basic storage unit at the same time Wait. It should be noted that, in the first block area, each page in each unit can be operated. In the second block area, only the LSB page in each unit can be manipulated. That is, the sec...

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Abstract

Embodiments of the invention provide a flash system and an LSB page quick backup method and apparatus. The method comprises the steps of receiving user data to be written into a multi-level cell NAND flash; dividing the multi-level cell NAND flash into a first block region and a second block region; and writing the user data into the first block region, wherein the user data in an LSB page corresponding to an MSB page is backed up in the LSB page of the second block region before the user data is written in the MSB page of the first block region. According to the method and the apparatus, in the process of storing the user data in the multi-level cell NAND flash such as the MLC NAND flash, a TLC NAND flash, a QLC NAND flash or the like, the user data in the LSB page can be quickly backed up, and the backup storage space is recovered; and meanwhile, the problem of power failure crash of a pairing page of the MLC NAND flash is solved, and the system performance is improved.

Description

technical field [0001] The invention relates to the technical field of electronic equipment, in particular to a method for quickly backing up LSB pages, a device for quickly backing up LSB pages and a flash memory system. Background technique [0002] For MLC (Multi-Level Cell, 2 bits / storage unit) NAND flash memory (a kind of flash memory, internally adopts nonlinear macrocell mode), TLC (Trinary Level Cell, 3 bits / storage unit) NAND flash memory, QLC (Quad Level Cell, 4 bits / storage unit) NAND flash memory and other multi-layer storage unit NAND flash memory, a basic storage unit can represent the corresponding data bits in two pages, namely LSB (Least Significant Bit, least significant bit) page and MSB (Most Significant Bit) page and MSB (Most Significant Bit) page Significant Bit, the most significant bit) corresponds to the data bit in the page, and the LSB page and the related MSB page are paired pages. Wherein, after programming the LSB page, when the relevant MSB p...

Claims

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Application Information

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IPC IPC(8): G06F11/14
CPCG06F11/1448G06F11/1456
Inventor 朱荣臻
Owner GIGADEVICE SEMICON (BEIJING) INC
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