Group iii nitride crystal, method for producing same and method for producing bulk group iii nitride crystal in supercritical ammonia gas
A technology of nitride crystals and nitrides, applied in chemical instruments and methods, crystal growth, from chemically reactive gases, etc., can solve problems such as limited success
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example 1
[0068] Example 1 (growth number 0858)
[0069] GaN crystals are grown by HVPE. A 2" c-plane sapphire substrate with a GaN layer grown by MOCVD was loaded in an HVPE reactor. After slowly changing the substrate temperature to about 1000°C under a constant flow of ammonia and nitrogen, gallium chloride gas was introduced for growth Single crystal GaN. After three hours of growth, the growth temperature was gradually decreased over 13 hours. The temperature was decreased linearly by 100°C over 13 hours, resulting in a temperature decrease rate of 100°C per 13 hours. After a total of 16 hours of growth (3 hours constant temperature and 13 hours gradient temperature), the supply of gallium chloride was discontinued and the boiler was closed. At about 800°C, the supply of ammonia gas was discontinued. The GaN crystals were allowed to cool in the reactor until the temperature reached about 300°C. When the crystal is taken out, the GaN crystal is partially self-separated from the s...
example 2
[0071] Example 2 (grinding / polishing of crystal)
[0072] Both sides of the GaN crystal were ground with a diamond grinder to obtain a GaN wafer with a thickness of 1.1 mm. The FWHM of the X-ray rocking curve for the first side is 1382 arc seconds, while the second side does not exhibit the 002 peak. Then, both sides of the GaN crystal wafer are further ground and polished with a diamond slurry. The total thickness becomes 0.85 mm and the Ra roughness on the nitrogen side is 0.5-0.8 nm and the Ra roughness on the gallium side is 0.8-1.2 nm. The FWHM of the X-ray rocking curve of the first side is improved to 1253 arcseconds. The first side does not have any cracks.
example 3
[0073] Example 3 (Ammoniathermal growth using the obtained GaN crystal)
[0074] The GaN crystal wafer obtained in Example 2 was used as a seed crystal for ammonothermal bulk growth. The high pressure reactor is filled with seeds, sodium metal, flow guides, polycrystalline GaN nutrients and ammonia gas. Then, the high pressure reactor was tightly sealed and heated to about 550°C. After 11 days of growth, bulk GaN crystals with a thickness of about 2.07 mm were obtained. The FWHM improvement of the X-ray rocking curve of the first side is 1048 arc seconds. The crystals also do not have cracks.
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