A kind of non-volatile memory data reading method

Abstract

The invention relates to a data reading method of a nonvolatile memory. The data reading method specifically comprises the following steps of connecting a peripheral reading circuit module, a low-resistance reference unit, a data unit and a high-resistance reference unit, and producing reading signals SL,SD and SH; connecting the input end of a signal processing module and the peripheral reading circuit module, simultaneously connecting with the low-resistance reference unit, the data unit and the high-resistance reference unit, and receiving the reading signals SL, SD and SH; connecting the output end of the signal processing module and the input end of a signal judging module, processing the received signals SL, SD and SH, and outputting two post-processed signals DL and DH; connecting the two input ends of the signal judging module and the two output ends of the signal processing module, receiving the signals DL and DH, comparing, judging and amplifying, and outputting final data reading results. The method has the advantages that the influence to the deviation of technology parameters is greatly decreased; the reading margin is further improved, so that the reading reliability of data of the nonvolatile memory is further improved.

Description

technical field [0001] The invention relates to a data reading method of a nonvolatile memory. It belongs to the technical field of memory. Background technique [0002] In recent years, new non-volatile memory technologies have developed rapidly and gradually entered the application stage, such as spin transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (Resistive Random Access Memory, RRAM), and phase change random access memory (PhaseChange Random Access Memory, PCRAM), etc., its working principle is to change the resistance value state of the non-volatile memory device in the storage unit to make it in the high resistance value (R H ) and low resistance (R L ), and store data information in this way. For example, a high resistance value represents a data bit "1", a low resistance value represents a data bit "0", or vice versa. [0003] Generally speaking, a memory contains two kinds of memory cells, one is a data cell, and its res...

AI Technical Summary

Problems solved by technology

However, in practice, due to the influence of process parameter deviation, the resistance value of the memory cell fluctuates

When the read decision margin cannot overcome the input mismatch of the read circuit itself, read errors may occur, affecting the data read reliability of the memory

In addition, due to the continuous shrinking of the process size, the deviation of process parameters continues to increase, and the read margin decreases, resulting in a continuous decline in read reliability.

Typical data reading solutions are difficult to meet actual needs

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