Method and device for laser processing wafers

A laser processing and wafer technology, which is applied in laser welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problems that affect the processing requirements of the processing technology, and achieve improved laser processing effects, uniform grooves, and small heat-affected zones. Effect

Active Publication Date: 2018-09-14
北京中科镭特电子有限公司
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Problems solved by technology

[0004] However, it is impossible to customize the groove structure formed on the Low-K layer on the upper surface of the wafer according to the requirements of the subsequent processing technology, which in turn affects the processing requirements of the subsequent processing technology.

Method used

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  • Method and device for laser processing wafers
  • Method and device for laser processing wafers
  • Method and device for laser processing wafers

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Embodiment Construction

[0056] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0057] Embodiments of the present invention provide a method for laser processing wafers, such as figure 1 As shown, the method includes:

[0058] S11, setting the preset groove shape information to be formed after the laser beam is processed on the Low-K layer on the upper surface of the wafer;

[0059] S12. Match the topological pattern d...

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Abstract

The invention provides a wafer laser processing method and a device. The method comprises the steps of setting the required preset channel information formed by laser beams on a Low-K layer of the upper surface of a wafer after processing; matching topological pattern distribution required by the laser beams according to the preset channel information; performing beam splitting treatment, shape-correction treatment and focusing treatment to the laser beams according to the topological pattern distribution, and then forming laser spots with the topological pattern distribution for etching the Low-K layer of the upper surface of the wafer and forming the preset channel shape. According to the processing method, the required channel shape formed by the laser beams on the Low-K layer of the upper surface of the wafer after processing can be determined according to the subsequent processing requirements, and the channel information is formed; then, the preset channel information is set through setting elements, and the preset channel information is matched with the optimal topological pattern distribution through a controller, so that the grooves formed on the low-K layer of the surface of the wafer by etching is uniform, a heat-affected zone is small, and the uniformity is high.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and device for laser processing wafers. Background technique [0002] In recent years, with the continuous reduction of the feature size of semiconductor devices and the continuous improvement of chip integration, the parasitic capacitance between metal interconnections and multilayer wiring and the resistance of metal wires have increased sharply, resulting in RC delays, A series of problems such as increased power consumption limit the development of high-speed electronic components. When the feature size of the device is less than 90nm, the wafer must use low dielectric constant materials to replace the traditional SiO2 layer (K=3.9~4.2). Commonly used Low-K materials include Dow Corning's FOx and porous SiLK materials, Applied Materials Black Diamond series low-K thin film materials, Novellus System's CORAL, Intel's CDO and NEC's FCN+ organic layer, etc. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/364
CPCB23K26/364B23K2103/56
Inventor 张紫辰侯煜刘嵩
Owner 北京中科镭特电子有限公司
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