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30results about How to "Improve the effect of laser processing" patented technology

Picosecond laser device and method for inhibiting first pulse in picosecond laser device

The invention discloses a picosecond laser device and a method for inhibiting a first pulse in the picosecond laser device. The method comprises the steps that a switch of an amplifier is turned on through a switch driving source during start to oscillate noise radiation of the amplifier in an amplification cavity of the amplifier for multiple times so as to form nanosecond laser pulses, and stored energy of a gain transistor of the amplifier is consumed in the forming and growing process of the laser pulses. When the stored energy of the gain transistor is reduced to a preset value, the switch of an amplifier is turned off through the switch driving source to make the amplification cavity of the amplifier output nanosecond-order laser pulses be in a high-loss state. A picosecond laser signal is obtained from an oscillator through a pulse menu device and is injected into the amplification cavity of the amplifier, and the gain transistor conducts multi-time amplification on the picosecond laser signal and outputs the signal. In the mode, by the adoption of the picosecond laser device and the method, first pulse energy of picosecond laser signals can be inhibited, the service life of optical components and devices can be prolonged, and a laser processing effect can be improved.
Owner:ACAD OF OPTO ELECTRONICS CHINESE ACAD OF SCI

Wafer laser-machining method and device

The invention provides a wafer laser-machining method and device. The relative positions of a laser beam and a predetermined cutting path are changed in the direction of the predetermined cutting pathon the upper surface of a wafer, so that a groove is formed in the predetermined cutting path. The method comprises the steps that a flattop light spot is formed on the predetermined cutting path after the laser beam is subjected to shape correction treatment; the flattop light spot is subjected to defocusing treatment, and M-shaped energy distribution with the edge energy greater than the intermediate energy is formed; the flattop light spot with the M-shaped energy distribution is used for etching the predetermined cutting path, so that the groove is formed; and the flattop light spot is subjected to defocusing treatment, energy flattop distribution is formed, and then the flattop light spot with the energy flattop distribution is used for etching the groove again. According to the wafer laser-machining method and device, the wafer can be etched through the flattop light spot with the different energy distribution forms in sequence, the groove bottom of the groove is flatter, the groove wall is steeper, the groove shape quality of the groove is improved, and subsequent machining requirements and the laser machining yield are guaranteed.
Owner:北京中科镭特电子有限公司

Controllable laser processing device based on wavefront modulation

InactiveCN105537760AImprove laser processing performanceUnleash the full potential of processing characteristicsLaser beam welding apparatusOptical pathWavefront
The invention relates to a controllable laser processing device based on wavefront modulation. The controllable laser processing device based on wavefront modulation comprises a laser processing head, an irradiation module and a photoelectric detection analysis module. The irradiation module and the photoelectric detection analysis module are located in different positions of the laser emitting mechanical edge of the laser processing head. Emitting beams of the irradiation module cover the laser processing working area and peripheral areas of the laser processing head, and light fields inside the emitting beam coverage area of the irradiation module are incident on the photoelectric detection analysis module. A light filed wavefront modulation element is arranged on a laser processing light path, so that shaping is achieved by focusing light spots, the laser processing performance is improved, and an optical material analysis technology and a photoelectric position detection technology are combined. Emitting light of the irradiation module irradiates the laser processing area and the peripheral areas of the laser processing head, material composition information and movement position information inside the irradiated areas are detected by the photoelectric detection analysis module, the phenomenon that a non-processing object enters the laser processing area is avoided, and laser of the laser processing device is safe and controllable.
Owner:UNIV OF SHANGHAI FOR SCI & TECH

Water-based nano coating material, preparation process of micro-crack diagnosis circuit and application of micro-crack diagnosis circuit

The invention discloses a water-based nano coating material and a preparation process and application of a micro-crack diagnosis circuit; the self-developed water-based nano coating material capable of being subjected to laser metallization treatment is adopted, and a laser beam moves on the surface of a product so as to activate the surface of the material at a place where a conductive path needsto be arranged. By means of a laser direct patterning + grain refining plating method, a conductive path width of 100 microns or less can be obtained. The invention aims to take out the influence ofother fillers and improve the precision of a laser direct graphical line, so that the laser direct graphical line reaches the preset mechanical property. The added laser direct patterning workpiece issprayed with a water-based nano coating in advance, so that the influence of other fillers on the material processability, the mechanical property and the later laser processability is avoided, and the quality of the workpiece is greatly improved; the prepared coating has good adhesive force, salt fog resistance, high temperature and high humidity resistance and cold and hot impact resistance, and a diagnosis circuit has good adhesive force and conductivity.
Owner:邓文

Device and method for laser processing wafer

The invention provides a device and method for wafer laser processing. The device comprises a laser unit, a beam expanding and collimating element, a phase-controlled-type silicon-based liquid crystal and a focusing element; the laser unit is used for emitting laser beams; the beam expanding and collimating element is used for beam expanding and collimating of the laser beams to form the parallel light beams; the phase-controlled-type silicon-based liquid crystal is used for conducing energy distribution modulation on the parallel light beams to form random customized multi-light-beam assemblies or conducting shape-correction treatment to form flattop light spots to be emitted to the focusing element; and the focusing element is used for emitting the random customized multi-light-beam assemblies or the flattop light spots to the upper surface of a wafer and removing Low-K materials of the upper surface of the wafer in the pre-set cutting way direction. According to the device and method for wafer laser processing, through the phase-controlled-type silicon-based liquid crystal, energy distribution modulation or shape-correction treatment is conducted on the parallel light beams to improve the work efficiency and accuracy of the processing method and the uniformity of wafer separation, and the device and method for wafer laser processing can be suitable for the requirements of the various flattop light spots.
Owner:北京中科镭特电子有限公司

Method and device for laser processing wafers

The invention provides a wafer laser processing method and a device. The method comprises the steps of setting the required preset channel information formed by laser beams on a Low-K layer of the upper surface of a wafer after processing; matching topological pattern distribution required by the laser beams according to the preset channel information; performing beam splitting treatment, shape-correction treatment and focusing treatment to the laser beams according to the topological pattern distribution, and then forming laser spots with the topological pattern distribution for etching the Low-K layer of the upper surface of the wafer and forming the preset channel shape. According to the processing method, the required channel shape formed by the laser beams on the Low-K layer of the upper surface of the wafer after processing can be determined according to the subsequent processing requirements, and the channel information is formed; then, the preset channel information is set through setting elements, and the preset channel information is matched with the optimal topological pattern distribution through a controller, so that the grooves formed on the low-K layer of the surface of the wafer by etching is uniform, a heat-affected zone is small, and the uniformity is high.
Owner:北京中科镭特电子有限公司

Method and device for laser processing wafer

ActiveCN107685196BTo meet the needs of subsequent processingThe groove wall is steepLaser beam welding apparatusLaser processingOptoelectronics
The invention provides a wafer laser-machining method and device. The relative positions of a laser beam and a predetermined cutting path are changed in the direction of the predetermined cutting pathon the upper surface of a wafer, so that a groove is formed in the predetermined cutting path. The method comprises the steps that a flattop light spot is formed on the predetermined cutting path after the laser beam is subjected to shape correction treatment; the flattop light spot is subjected to defocusing treatment, and M-shaped energy distribution with the edge energy greater than the intermediate energy is formed; the flattop light spot with the M-shaped energy distribution is used for etching the predetermined cutting path, so that the groove is formed; and the flattop light spot is subjected to defocusing treatment, energy flattop distribution is formed, and then the flattop light spot with the energy flattop distribution is used for etching the groove again. According to the wafer laser-machining method and device, the wafer can be etched through the flattop light spot with the different energy distribution forms in sequence, the groove bottom of the groove is flatter, the groove wall is steeper, the groove shape quality of the groove is improved, and subsequent machining requirements and the laser machining yield are guaranteed.
Owner:北京中科镭特电子有限公司

Controllable Laser Processing Device Based on Wavefront Modulation

InactiveCN105537760BUnleash the full potential of processing characteristicsAchieve shapingLaser beam welding apparatusWavefrontLaser processing
The invention relates to a controllable laser processing device based on wavefront modulation. The controllable laser processing device based on wavefront modulation comprises a laser processing head, an irradiation module and a photoelectric detection analysis module. The irradiation module and the photoelectric detection analysis module are located in different positions of the laser emitting mechanical edge of the laser processing head. Emitting beams of the irradiation module cover the laser processing working area and peripheral areas of the laser processing head, and light fields inside the emitting beam coverage area of the irradiation module are incident on the photoelectric detection analysis module. A light filed wavefront modulation element is arranged on a laser processing light path, so that shaping is achieved by focusing light spots, the laser processing performance is improved, and an optical material analysis technology and a photoelectric position detection technology are combined. Emitting light of the irradiation module irradiates the laser processing area and the peripheral areas of the laser processing head, material composition information and movement position information inside the irradiated areas are detected by the photoelectric detection analysis module, the phenomenon that a non-processing object enters the laser processing area is avoided, and laser of the laser processing device is safe and controllable.
Owner:UNIV OF SHANGHAI FOR SCI & TECH
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