A method for preparing a low-temperature polysilicon TFT array substrate and the array substrate
A low-temperature polysilicon and array substrate technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex production process, reduced production efficiency, and increased production cost, and achieves the effect of simplifying the preparation process
Active Publication Date: 2020-08-25
BOE TECH GRP CO LTD
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Problems solved by technology
[0004] The invention provides a method for preparing a low-temperature polysilicon TFT array substrate and the array substrate, which are used to solve the problems of reduced production efficiency and increased production cost caused by the complex production process of the low-temperature polysilicon TFT array substrate in the prior art
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[0049] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0050] Embodiments of the present invention provide a method for preparing a low temperature polysilicon TFT array substrate, which is used to solve the problems of reduced production efficiency and increased production cost caused by complex production processes of low temperature polysilicon TFT array substrates in the prior art. see figure 1 As shown, the preparation method includes:
[0051] In step S100, an amorphous silicon fil...
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Abstract
The invention relates to the field of display technology, and discloses a method for preparing a low-temperature polysilicon TFT array substrate and the array substrate. The preparation method includes sequentially forming an amorphous silicon film layer and a polysilicon film layer on a base substrate; patterning the amorphous silicon film layer and the polysilicon film layer through a patterning process, so that the amorphous silicon film forming a light-shielding layer pattern, and making the polysilicon layer form an active layer pattern. Compared with the prior art, the preparation method of the low-temperature polysilicon TFT array substrate provided by the present invention saves a patterning process, simplifies the preparation process of the low-temperature polysilicon TFT array substrate, improves the production efficiency of the low-temperature polysilicon TFT array substrate and reduces the Cost of production.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to a method for preparing a low-temperature polysilicon TFT array substrate and the array substrate. Background technique [0002] In the current field of display panel technology, low temperature polysilicon (Low Temperature Poly-silicon; LTPS) technology has received extensive attention and application. Low temperature polysilicon has the characteristics of high mobility, so using TFT (Thin Film Transistor; thin film transistor) devices made of low temperature polysilicon in the display panel can improve the resolution, response speed, brightness and aperture ratio of the display panel. The low temperature polysilicon technology can integrate the peripheral driving circuit of the display panel on the substrate, and can also save the space of the display panel and reduce the production cost. [0003] However, in the preparation process of the low temperature polysilicon T...
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IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1214H01L27/1259H01L27/1288H01L29/78633H01L27/1218H01L27/127H01L21/02178H01L21/02244H01L21/0245H01L21/02488H01L21/02502H01L21/02513H01L21/02532H01L21/02592H01L21/02675H01L29/66757H01L29/78675
Inventor 班圣光曹占锋姚琪
Owner BOE TECH GRP CO LTD