Integrated design of third-generation semiconductor bias circuit
A bias circuit and semiconductor technology, applied in the field of microwave radio frequency, can solve problems such as reliability and radio frequency related parameters cannot be guaranteed, complex sequential circuits, etc.
Pending Publication Date: 2017-11-24
南京正銮电子科技有限公司
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Problems solved by technology
Application engineers generally use high-power switches to realize this function, which requires more complex sequential circuits, and the reliability and RF-related parameters cannot be guaranteed
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[0015] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Hereinafter, embodiments of the present invention will be described in detail, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. Those skilled in the art will understand that unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the word "comprising" used in the description of the present invention refe...
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The invention discloses an integrated design of a third-generation semiconductor bias circuit and relates to the field of microwave radio frequency. A single power supply is used for supplying power, only drain voltages added, radio frequency signals at an input end are coupled, and the signals are rapidly demodulated into a corresponding wareform form, for controlling the drain voltages of a power tube. The design comprises a directional coupler, a power amplifier, a voltage stabilizing block, a demodulator, a potentiometer and a modulator, wherein an external power supply supplies power to the voltage stabilizing block and the modulator, the voltage stabilizing block is respectively connected with the demodulator and the modulator and separates grid voltages for connection with the input end of the power amplifier; the demodulator is connected with the voltage stabilizing block, the modulator, the potentiometer and a load; the modulator separates the drain voltages for connection with the output end of the power amplifier; radio frequency is input to the input end of the directional coupler, and the input end of the power amplifier is connected with the output end of the directional coupler and the grid voltages. According to such a method, the demands (including continuous wave or pulse conditions) of different application occasions can be realized, and the reliability of the power tube can also be guaranteed.
Description
technical field [0001] The invention relates to the field of microwave radio frequency, in particular to the integrated design of the third generation semiconductor bias circuit. Background technique [0002] At present, in the application of high-power power amplifiers, the operating frequency is below 4GHz, and the first and second-generation transistors represented by materials such as Si and GaAs have almost completely replaced electron tubes. With the development of semiconductor materials, the third-generation semiconductor transistors represented by SiC, GaN and other materials are gradually recognized by power amplifier designers. However, due to the characteristics of the third-generation semiconductors, application engineers need to master their inherent bias characteristics, namely The grid voltage of the power tube is added to the power tube before the drain voltage. Application engineers generally use high-power switches to realize this function, which requires...
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Login to View More IPC IPC(8): H03F3/213H03F3/21
CPCH03F3/21H03F3/213H03F2200/555
Inventor 刘建波
Owner 南京正銮电子科技有限公司