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Detection device, process system and detection method

A detection device and cleanliness detection technology, applied in transmittance measurement and other directions, can solve the problems of particle splashing, uneven thickness and thickness, pollution and scrapping of annealing windows, etc., and achieve the effect of avoiding pollution of equipment

Active Publication Date: 2021-02-23
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Usually, the thickness of a-si film layer is thin or uneven, so in the ELA process, some a-si film layers are prone to over-annealing. Here, the PI film under this part of the a-si film layer The layer is difficult to withstand high-energy laser irradiation, and ashing of the film will occur. When ashing of the film occurs, a large number of particles will be produced, and the particles will splash, which will cause serious pollution to the equipment, especially the annealing window. (annealingwindow) Pollution and scrapping

Method used

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  • Detection device, process system and detection method
  • Detection device, process system and detection method
  • Detection device, process system and detection method

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Embodiment Construction

[0035] In order for those skilled in the art to better understand the technical solution of the present invention, the detection device, process system and detection method provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0036] figure 1 It is a schematic structural diagram of a detection device provided in Embodiment 1 of the present invention, figure 2 for figure 1 Another perspective schematic diagram of the detection device, image 3 for figure 1 Schematic diagram of the light-incident side of the detection device, Figure 4 for image 3 The internal schematic diagram of the detection device, as Figure 1 to Figure 4 As shown, the detection device includes a box body 1 and an ashing detection device, an opening 2 is arranged on the light incident side of the box body 1, a window 3 is arranged on the opening 2, and a slit 4 is arranged on the light output side of the box body 1 .

[0037] The window 3...

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Abstract

The invention discloses a detection device, a process system and a detection method. The detection device includes a box body and an ashing detection device, an opening is provided on the light incident side of the box body, a window is provided on the opening, and a slit is provided on the light output side of the box body; The body is used to transmit the incident light to the slit; the slit is used to transmit the light to the target substrate located outside the light-emitting side of the box; the ashing detection device is used to detect Whether the target substrate is ashed. In the technical solutions of the detection device, process system and detection method provided by the present invention, the ashing detection device can detect whether the target substrate is ashed, and when the ashing detection device detects that the target substrate is ashed, it can immediately stop the irradiation light on the target substrate, thereby avoiding contamination of the device by particles generated by ashing.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a detection device, a process system and a detection method. Background technique [0002] Excimer laser annealing (ELA for short) process is an important part of low temperature polysilicon (Low Temperature Poly-silicon, LTPS for short) process. Currently, the ELA process is also applied in the flexible display process. In the current flexible display process, a layer of polyimide (PolyimideFilm, referred to as PI) film layer is first coated on the glass substrate, and then the a-si film layer is deposited on the PI film, and then the a-si film layer is processed by ELA equipment. The film is crystallized. [0003] Usually, the thickness of a-si film layer is thin or uneven, so in the ELA process, some a-si film layers are prone to over-annealing. Here, the PI film under this part of the a-si film layer The layer is difficult to withstand high-energy laser irradiation, and a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/59
CPCG01N21/59
Inventor 王学勇周连猛冯长海王治
Owner BOE TECH GRP CO LTD