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memory device

A storage device and magnetic layer technology, which is applied to magnetic field controlled resistors, parts of electromagnetic equipment, material selection, etc., can solve problems such as inability to operate and slow down the operation speed of the memory, and achieve the effect of increasing the operation speed

Active Publication Date: 2021-01-15
IUCF HYU (IND UNIV COOP FOUND HANYANG UNIV)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the magnetization direction of the magnetic tunnel junction may change rapidly, thereby reducing the operating speed of the memory or making it impossible to operate.

Method used

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Embodiment Construction

[0025]Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the embodiments disclosed below, and can be embodied in various forms. However, the present embodiment completes the disclosure of the present invention and provides those of ordinary skill in the art to which the present invention belongs. category.

[0026]figure 1 It is a cross-sectional view of a memory device according to an embodiment of the present invention, a cross-sectional view of a spin torque magnetic random access memory device.

[0027]Referencefigure 1 , The memory device of an embodiment of the present invention includes a lower electrode 110 formed on a substrate 100, a first buffer layer 120, a seed layer 130, a synthetic exchange semi-magnetic layer 140, a cover layer 150, a fixed layer 160, a magnetic tunnel barrier 170, a free The layer 180, the second buffer layer 190 and the upper electrode 200. That is...

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Abstract

The invention includes a lower electrode, a first buffer layer, a seed layer, a synthetic exchange semi-magnetic layer, a cover layer, a fixed layer, a magnetic tunnel barrier, a free layer, a second buffer layer and an upper electrode formed on a substrate. Disclosed is a storage device, which is sequentially laminated on a substrate from a lower electrode to an upper electrode, and a synthetic exchange semi-magnetic layer has a laminated structure of a first magnetic layer, a non-magnetic layer, and a second magnetic layer, a fixed layer, a magnetic tunnel barrier, and a free layer. A magnetic tunnel junction is formed.

Description

[0001]This application claims the priority of Korean patent application No. 10-2015-0037233 filed on March 18, 2015 and Korean patent application No. 10-2015-0045173 filed on March 31, 2015. The above-mentioned Korean patent All the contents disclosed in the application documents will be included in this specification as a part of this specification.Technical field[0002]The present invention relates to a storage device, and in particular, to a magnetic storage device using a magnetic tunnel junction (MTJ).Background technique[0003]Research is being conducted on next-generation non-volatile memory devices that consume less power than flash memory devices and have high integration accuracy. This next-generation non-volatile memory device includes a phase change RAM (PRAM) that uses a state change of a phase change substance such as a chalcogenide alloy, and a magnetic tunnel that uses a ferromagnetic magnetization state. MTJ (Magnetic Tunnel Junction, MTJ) impedance change magnetic me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/02H01L43/10H01L43/12
CPCH10N50/80H10N50/85H10N50/01H10N50/10
Inventor 朴在勤洪松花
Owner IUCF HYU (IND UNIV COOP FOUND HANYANG UNIV)