Preparation and application method of high temperature resistant wire bundle electrode for characterization of combined material chip

Abstract

The invention relates to an electrode technology and provides a high-temperature resistant wire beam electrode for characterization of a composite chip. The electrode comprises a plurality of stainless steel bars, a plurality of lead wires and a lead wire connector plug, wherein the stainless steel bars are arranged in parallel and encapsulated and cured into a whole by high melting point and highheat stability glass; the stainless steel bars are 2mm in diameter; distances between the stainless steel bars are 2-4mm; a melting point of the high melting point and high heat stability glass is about 1000 DEG C; and a softening temperature of the glass is about 750 DEG C. The invention further provides a preparation method and a use method of the high-temperature resistant wire beam electrode.The electrode adopts the glass as an encapsulating material, has stability under ultrahigh vacuum, is not volatilized during filming to avoid influence on film formation quality of a film, can be used for uniformity evaluation of the film, and can characterize electrochemical properties of the composite chip and achieve high-throughput electrochemical characterization at the high temperature.

Description

technical field [0001] The invention relates to electrode technology, in particular to a high-temperature-resistant filament bundle electrode used for characterization of composite material chips, a preparation method and a use method. Background technique [0002] Combination material chip technology was first proposed by Xiang Xiaodong and others from the Lawrence Berkeley Laboratory in the United States in "Science" in 1995. The main purpose is to simultaneously synthesize up to 10 chips through one experiment. 8 Through decades of rapid development, this technology has achieved remarkable results in the research of phase diagrams of multi-component alloys and the research and development and screening of accelerated materials. Although the high-throughput preparation technology of materials has become increasingly mature, the development of high-throughput characterization in the actual service environment is relatively slow, especially in the field of electrochemistry, ...

AI Technical Summary

Problems solved by technology

However, due to the low melting point of the epoxy resin used for encapsulation, it can only serve at a maximum of 200°C, which makes the wire bundle electrode unable to be used in a high temperature environment.

If you want to use the wire beam electrode method to evaluate the uniformity of the film, you need to coat the surface of the wire beam electrode in a high vacuum environment, but epoxy resin is easy to volatilize organic substances when sputtering in an ultra-high vacuum environment, and these organic substances It will seriously affect the deposition quality of the thin film on the filament electrode, causing a sharp drop in the bonding force of the film base, and prone to rupture or peeling of the thin film

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