Preparation method and use method of high-temperature resistant wire beam electrode for characterization of composite chip

Abstract

The invention relates to an electrode technology and provides a high-temperature resistant wire beam electrode for characterization of a composite chip. The electrode comprises a plurality of stainless steel bars, a plurality of lead wires and a lead wire connector plug, wherein the stainless steel bars are arranged in parallel and encapsulated and cured into a whole by high melting point and highheat stability glass; the stainless steel bars are 2mm in diameter; distances between the stainless steel bars are 2-4mm; a melting point of the high melting point and high heat stability glass is about 1000 DEG C; and a softening temperature of the glass is about 750 DEG C. The invention further provides a preparation method and a use method of the high-temperature resistant wire beam electrode.The electrode adopts the glass as an encapsulating material, has stability under ultrahigh vacuum, is not volatilized during filming to avoid influence on film formation quality of a film, can be used for uniformity evaluation of the film, and can characterize electrochemical properties of the composite chip and achieve high-throughput electrochemical characterization at the high temperature.

Description

Technical field [0001] The invention relates to electrode technology, in particular to a high-temperature-resistant tow electrode used for the characterization of a composite material chip, and a preparation and use method. Background technique [0002] The composite material chip technology was first proposed by Xiang Xiaodong and others in Lawrence Berkeley Laboratory in 1995 in "Science", mainly to synthesize as many as 10 at the same time through one experiment. 8 This kind of material samples can achieve high-throughput preparation in high-throughput experiments. After decades of rapid development, this technology has achieved remarkable results in the research of multi-alloy phase diagrams and accelerated material research and development and screening. Although the high-throughput preparation technology of materials has become increasingly mature, the development of high-throughput characterization in actual service environments has been relatively slow, especially in the f...

AI Technical Summary

Problems solved by technology

However, due to the low melting point of the epoxy resin used for encapsulation, it can only serve at a maximum of 200°C, which makes the wire bundle electrode unable to be used in a high temperature environment.

If you want to use the wire beam electrode method to evaluate the uniformity of the film, you need to coat the surface of the wire beam electrode in a high vacuum environment, but epoxy resin is easy to volatilize organic substances when sputtering in an ultra-high vacuum environment, and these organic substances It will seriously affect the deposition quality of the thin film on the filament electrode, causing a sharp drop in the bonding force of the film base, and prone to rupture or peeling of the thin film

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