Method and system for wafer separation

Abstract

The invention provides a method and a device for wafer separation. One aspect of the invention provides a method for wafer separation, comprising the steps of: irradiating a metal layer with laser beams on a wafer for scribe lines to completely remove the metal layer; and executing, by a cutting device, a single cutting operation on the scribe lines to cut the wafer. Thus, the wafer cutting efficiency is greatly improved and the wafer cutting cost is reduced at the same time.

Description

technical field [0001] The present invention relates to the field of semiconductor wafer processing, and in particular to methods and systems for wafer separation. Background technique [0002] The scaling of features in microelectronic devices has been a driving force in the growing semiconductor industry over the past few decades. Scaling to smaller and smaller features enables an increased density of functional units on the limited real estate of a semiconductor chip. For example, shrinking transistor size allows a greater number of memory devices to be incorporated on a chip, resulting in the manufacture of products with greater capacity. [0003] In semiconductor manufacturing, low-k dielectrics are materials that have a lower dielectric constant than silicon dioxide. The implementation of low-k dielectric materials is one of several strategies used to enable continued scaling of microelectronic devices. However, low-k dielectric materials have a detrimental effect o...

AI Technical Summary

Problems solved by technology

However, low-k dielectric materials have a detrimental effect on the wafer dicing process because microcracks can easily develop and propagate into the metal layer

Images