An insulated gate bipolar transistor drive circuit

A technology of bipolar transistors and driving circuits, which is applied in the directions of improving the reliability of bipolar transistors, improving the reliability of field effect transistors, and fail-safe circuits, and can solve problems such as damage to IGBTs.

Active Publication Date: 2021-09-14
BEIJING ELECTRIC VEHICLE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the embodiments of the present invention is to provide an insulated gate bipolar transistor drive circuit to solve the problem that the gate overvoltage of the IGBT will damage the IGBT

Method used

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  • An insulated gate bipolar transistor drive circuit

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Embodiment Construction

[0042] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments. In the following description, specific details, such as specific configurations and components, are provided only to assist in a comprehensive understanding of the embodiments of the present invention. Accordingly, those of ordinary skill in the art should recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the invention. Also, descriptions of well-known functions and constructions are omitted for clarity and conciseness.

[0043] It should be understood that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic related to the embodiment is included in at least one embodiment of t...

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Abstract

The present invention provides an insulated gate bipolar transistor drive circuit, comprising: a primary side power supply circuit; a secondary side power supply circuit connected to the primary side power supply circuit, and the secondary side power supply circuit includes: a high side drive circuit and a low side power supply circuit A side drive circuit, the high side drive circuit is connected to the low side drive circuit, and cooperates to output an electrical signal to the gate of the insulated gate bipolar transistor; and, a protection circuit, the first end of the protection circuit is connected to To the gate of the IGBT, the second end is connected to the high-side drive circuit, when the voltage at the first end of the protection circuit is higher than the voltage at the second end, the protection circuit is turned on . In the embodiment of the present invention, by setting the protection circuit so that when the gate of the IGBT is overvoltage, the voltage at the first terminal of the protection circuit will be higher than the voltage at the second terminal, and then the protection circuit is turned on, thereby turning off the voltage of the gate of the IGBT. The voltage is fed back to the high-side drive circuit to protect the IGBT from damage when the gate is overvoltage.

Description

technical field [0001] The invention relates to the technical field of circuit design, in particular to an insulated gate bipolar transistor driving circuit. Background technique [0002] The motor controller used in the field of electric vehicles converts the DC power of the high-voltage power battery into a three-phase AC power that controls the rotation of the traction motor, thereby controlling the normal driving of the electric vehicle. The whole controller is composed of a high-voltage input filter circuit, a sampling circuit, an auxiliary power supply, a drive circuit, an inverter circuit, an external signal acquisition circuit, and a control circuit. [0003] The gate-emitter drive voltage U of the insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) in the drive circuit GE The guaranteed value of the IGBT is ±20V. If a voltage exceeding the guaranteed value is applied between its gate and the emitter, the IGBT may be damaged. In addition, if...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/003H03K19/007H03K19/0175
CPCH03K19/00307H03K19/00315H03K19/00353H03K19/00361H03K19/007H03K19/017518
Inventor 武盼盼葛亮苏伟蒋荣勋
Owner BEIJING ELECTRIC VEHICLE
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